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UV-Laser Ablation of HFO2 Dielectric Layers on SiO2 for Mask Preparation

Published online by Cambridge University Press:  15 February 2011

K. Rubahn  and
J. Ihlemann
K. Rubahn
Affiliation:
Laser-Laboratorium Göttingen e.V., 37077 Göttingen, Germany, krubahn@llg.gwdg.de
J. Ihlemann
Affiliation:
Laser-Laboratorium Göttingen e.V., 37077 Göttingen, Germany
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Abstract

The thickness dependence of ablation rates following 193nm UV-laser irradiation of single HfO2 layers on fused silica (SiO2) is investigated using scanning electron microscopy and stylus profilometry to determine quantitatively substrate roughness and ablation depth. Thin dielectric films of the investigated kind build up dielectric mirrors, which are patterned to prepare masks for excimer-laser micromachining. The single pulse ablation thresholds are found to increase approximately linearly with increasing HfO2 thickness and consequently the threshold fluence for obtaining clean ablation of the total HfO2 coating increases exponentially with its thickness. At elevated fluences both ablation of the coating as well as ablation of the substrate are observed. The results provide important quantitative values for a future treatment of more complicated multilayer systems of HfO2/SiO2 bilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 526: Symposium Y – Advances in Laser Ablation of Materials , 1998 , 137
Copyright
Copyright © Materials Research Society 1998

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References

1. Ihlemann, J. and Wolff-Rottke, B., Appl.Surf.Sci. 86,1995,228.Google Scholar
2. Rubahn, K. and Ihlemann, J., Appl. Surf. Sci. 127–129,1998,000.Google Scholar
3. Frank, M., Schallenberg, U.B., Kaiser, N., Buß, W. in Miniaturized Systems with Micro-optics and Micromechanics III, Proceedings SPIE 3008,1997, p. 265.Google Scholar
4. Matthias, E. and Dreyfus, R.W., Topics in Current Physics 47,1989,89.Google Scholar
5. Rothschild, M., Ehrlich, D.J. and Shaver, D.C., Appl.Phys.Lett. 55,1989,1276.Google Scholar
6. Park, H.K. and Haglund, R.F. Jr., Appl.Phys. A 64,1997,431.Google Scholar
7. Dirnberger, L., Dyer, P.E., Farra, S., Key, P.H. and Monk, P., Appl.Surf.Sci. 69,1993,216.Google Scholar
8. Scott, M.L., Laser Induced Damage in Optical Materials, 1983, p.329.Google Scholar
9. Balzer, F. and Rubahn, H.-G., Chem.Phys.Lett. 233,1995,75.Google Scholar
10. Ihlemann, J., Appl.Surf.Sci. 54,1992,193.Google Scholar
11. Rubahn, K., Ihlemann, J., Balzer, F. and Rubahn, H.-G., in preparation.Google Scholar
12. Guenther, A.H. and Mclver, J.K., Thin Solid Films 163,1988,403.Google Scholar
13. Zhang, J., Sugioka, K., Wada, S., Tashiro, H. and Toyoda, K., Appl.Phys. A 64,1997,477.Google Scholar