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Vacancy-Type Defects in Ion-Implanted Si Studied By Slow Positron Beam

Published online by Cambridge University Press:  26 February 2011

P. Hautojdärvi ,
P. Huttunen ,
J. Mäkinen ,
E. Punkka  and
A. Vehanen
P. Hautojdärvi
Affiliation:
Laboratory of Physics, Helsinki University of Technology, 02150 Espoo, Finland
P. Huttunen
Affiliation:
Laboratory of Physics, Helsinki University of Technology, 02150 Espoo, Finland
J. Mäkinen
Affiliation:
Laboratory of Physics, Helsinki University of Technology, 02150 Espoo, Finland
E. Punkka
Affiliation:
Laboratory of Physics, Helsinki University of Technology, 02150 Espoo, Finland
A. Vehanen
Affiliation:
Laboratory of Physics, Helsinki University of Technology, 02150 Espoo, Finland
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Abstract

Variable-energy positron beam studies have been made on ion implanted silicon. After 35, 60 and 100 keV H+ implantation a clear separation between vacancy and H atom distributions was found. In 100 keV As+ and P+ implanted Si the damaged layer extends to 300 and 400 nm, respectively, far beyond the the range of implanted atoms and the amorphous layer. Effect of thermal and laser annealing is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 105
Copyright
Copyright © Materials Research Society 1988

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References

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