Hostname: page-component-7dd5485656-hw7sx Total loading time: 0 Render date: 2025-10-30T23:55:57.205Z Has data issue: false hasContentIssue false
  • English
  • Français

Vertically Integrated Amorphous Silicon Particle Sensors

Published online by Cambridge University Press:  21 March 2011

N. Wyrsch ,
C. Miazza ,
S. Dunand ,
A. Shah ,
D. Moraes ,
G. Anelli ,
M. Despeisse ,
P. Jarron ,
G. Dissertori  and
G. Viertel
N. Wyrsch
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, CH-2000 Neuchâtel, Switzerland
C. Miazza
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, CH-2000 Neuchâtel, Switzerland
S. Dunand
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, CH-2000 Neuchâtel, Switzerland
A. Shah
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, CH-2000 Neuchâtel, Switzerland
D. Moraes
Affiliation:
CERN, CH-1211 Genève 23, Switzerland
G. Anelli
Affiliation:
CERN, CH-1211 Genève 23, Switzerland
M. Despeisse
Affiliation:
CERN, CH-1211 Genève 23, Switzerland
P. Jarron
Affiliation:
CERN, CH-1211 Genève 23, Switzerland
G. Dissertori
Affiliation:
Institute for Particle Physics, ETH-Zurich, CH-8093 Zurich, Switzerland.
G. Viertel
Affiliation:
Institute for Particle Physics, ETH-Zurich, CH-8093 Zurich, Switzerland.
Get access

Abstract

Vertically integrated particle sensors have been developed using thin-film on ASIC technology. Hydrogenated amorphous silicon n-i-p diodes have been optimized for particle detection. These devices were first deposited on glass substrates to optimize the material properties and the dark current of very thick diodes (with thickness up to 50 m). Corresponding diodes were later directly deposited on two types of CMOS readout chips. These vertically integrated particle sensors were tested in beta particle beam from 63Ni and 90Sr sources. Detection of single low- and high- energy beta particle was achieved.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Street, R.A., “Large Area Image Sensor Arrays” in Technology and Application of Amorphous Silicon, ed. Street, R.A., Springer Series in Materials Sciences 37 (Springer-Verlag, Berlin, 2000), p.147.Google Scholar
[2] Antonuk, L.E., Boudry, J., Yorkston, J., Wild, C. F., Longo, M.J., Street, R.A., Nucl. Instr. and Meth. in Phys. Res. A299, 143 (1990).Google Scholar
[3] Kuendig, J.et al., Solar Energy Mat. and Solar Cells 79, 425 (2003).Google Scholar
[4] Perez-Mendez, V.et al., Nucl. Instr. and Meth. A273, 127 (1988).Google Scholar
[5] Dubeau, J.et al., Mat. Res. Soc. Symp. Proc. Vol. 118, 439 (1988).Google Scholar
[6] Hordequin, C.et al., Nucl. Instr. and Meth. In Phys. Res. A456, 284 (2001) 284.Google Scholar
[7] Schneider, B., Rieve, P., Böhm, M., in Handbook on Computer Vision an Applications, ed. Jähne, B., Hauβecker, H., Geiβler, P., (Academic Press, Boston, 1999)pp. 237–270.Google Scholar
[8] Theil, J. A.et al., J. of Non-Cryst. Sol. 299–302, 1234 (2002).Google Scholar
[9] Wyrsch, N.et al., Mat. Res. Soc. Symp. Proc. 762, 205 (2003).Google Scholar
[10] Chabloz, P., Keppner, H., Fischer, D., Link, D., Shah, A., J. Non-Cryst. Sol., 198–200, 1159 (1996).Google Scholar
[11] Shah, A.et al., Mat. Res. Soc. Symp. Proc. 258, 15 (1992).Google Scholar
[12] Qureshi, S.et al., Mat. Res. Soc. Symp. Proc. Vol. 149, 649 (1989).Google Scholar
[13] Perez-Mendez, V-et al., J. of Non-Cryst. Sol. 137-138, 1291 (1991).Google Scholar
[14] Morrison, S.et al., Mat. Res. Soc. Symp. Proc. Vol. 715, 701 (2002).Google Scholar
[15] Miazza, C. et al, MRS Proc., this volume.Google Scholar