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Viscosity, Structural Relaxation and Defect Annihilation Kinetics of Amorphous Si
Published online by Cambridge University Press: 26 February 2011
Abstract
Substrate curvature measurements were used to monitor viscous flow in ion beam sputtered amorphous Si for temperatures ranging from 150 to 400 °C. The viscosity increases linearly with time, characteristic of a bimolecular defect annihilation process. This is consistent with the defects governing viscous flow being dangling bonds. The isoconfigurational activation enthalpy for the viscosity is 1.8 ±.3 eV.
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- Copyright © Materials Research Society 1992
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