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Visible Electro- and Photoluminescence from Porous Silicon and its Related Optoelectronic Properties

Published online by Cambridge University Press:  15 February 2011

Nobuyoshi Koshida  and
Hideki Koyama
Nobuyoshi Koshida
Affiliation:
Tokyo University of Agriculture and Technology, Faculty of Technology, Division of Electronic and Information Engineering, Koganei, Tokyo 184, Japan
Hideki Koyama
Affiliation:
Tokyo University of Agriculture and Technology, Faculty of Technology, Division of Electronic and Information Engineering, Koganei, Tokyo 184, Japan
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Abstract

The optoelectronic properties of porous Si (PS) are presented in terms of electroluminescence (EL), photoluminescence (PL), photoconduction (PC), and optical absorption. Observations of injection-type EL, efficient PL, band-gap widening, and photosensitivities In the visible region are consistent with the quantum size effect model in PS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 219
Copyright
Copyright © Materials Research Society 1992

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References

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