Hostname: page-component-848d4c4894-2pzkn Total loading time: 0 Render date: 2024-05-07T05:30:13.207Z Has data issue: false hasContentIssue false
  • English
  • Français

Voltage Dependent Field Emission Energy Distribution Analysis of Wide Bandgap Materials

Published online by Cambridge University Press:  10 February 2011

B.L. Mccarson ,
R. Schlesser  and
Z. Sitar
B.L. Mccarson
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, blmccars@eos.ncsu.edu
R. Schlesser
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919
Z. Sitar
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919
Get access

Abstract

Field emission from wide bandgap materials was investigated through voltage dependent field emission energy distribution (V-FEED) analysis. As compared to classical I-V characterization, V-FEED analysis can provide additional, detailed information about the origin of and the mechanism responsible for the field emission of electrons. The V-FEED technique consists of measuring the energy distribution of field emitted electrons collected at various extraction voltages. By measuring changes in the energy of the field emission peak at different voltages, data can be extrapolated to flat-band condition to determine the energy of the band from which the electron emission originated. In this study, field emission from cubic boron nitride (c-BN) coated and diamond coated tip-shaped Mo emitters was examined. For the nominally intrinsic wide bandgap coating materials studied, a linear voltage drop across the wide bandgap material, usually on the order of 1% of extraction voltage was observed and explained by field induced band-bending. For the intrinsic c-BN and diamond samples studied, the electron emission originated from the conduction band minimum at the wide bandgap material/vacuum interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 509: Symposium C – Materials Issues in Vacuum Microelectronics , 1998 , 131
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Brodie, I., and Spindt, C. A., Adv. Electron. Electron Phys. 83, 1 (1992).Google Scholar
2 Schwoebel, P. R., and Brodie, I., J. Vac. Sci. Technol. B 13, 1391 (1995).Google Scholar
3 Spindt, C. A., J. Appl. Phys. 39, 3504 (1968).Google Scholar
4 Choi, W. B., Liu, J., McClure, M. T., Myers, A. F., Zhirnov, V. V., Cuomo, J. J. and Hren, J. J., J. Vac. Sci. Technol. B 14, 2050 (1996).Google Scholar
5 Schlesser, R., McClure, M. T., Choi, W. B., Hren, J. J., and Sitar, Z., Appl. Phys Lett. 70, 1596 (1997).Google Scholar
6 Schlesser, R., McClure, M. T., McCarson, B. L., and Sitar, Z., J. Appl. Phys. 82, 5763 (1997).Google Scholar
7 Powers, M. J., Benjamin, M. C., Porter, L. M., Nemanich, R. J., Davis, R. F., Cuomo, J. J., Doll, G. L., and Harris, S. J., Appl. Phys. Lett. 67, 3912 (1995).Google Scholar
8 Pryor, R. W., Mat. Res. Soc. Symp. Proc. 416, 425 (1996).Google Scholar
9 Weide, J. van der, Zhang, Z., Baumann, P. K., Wensell, M. G., Bernhole, J., and Nemanich, R. J., Phys. Rev. B 50, 5803 (1994).Google Scholar
10 Mainwood, A., in Properties and Growth of Diamond, edited by Davies, G. (INSPEC, London, U.K., 1994), p. 3.Google Scholar