In this paper, we present design considerations pertinent to amorphous silicon pixel circuits for mechanically flexible active matrix display applications. We describe both circuit topologies and pixel architectures that are amenable to surface emissive pixels in a-Si:H technology. Metastable shifts in the a-Si:H material characteristics after prolonged gate bias or mechanical stress are manifested in the form of increasing TFT threshold voltages and varying mobilities. As a result, the TFT drive current and consequently the OLED brightness decrease, and the pixel eventually turns off. The circuits presented here compensate for this decrease in current through the use of current programming and feedback, and allow for stable OLED brightness over longer time periods. They also enable the implementation of high aperture ratio (close to 100%), low leakage current, surface emissive OLED pixels. Results show that the circuits provide higher linearity and dynamic range than currently available pixel circuits while minimizing the pixel area. Charge injection effects at the gate of the drive TFT have been reduced by using smaller switching TFTs, along with circuit topologies that provide in-pixel current gain. All circuits meet the speed requirements of a QVGA 60 Hz refresh rate display, and occupy less than 300um x 300um area.
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