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Wet Oxidation of Poly-Si1-xGex Layer Grown on SiO2/Si

Published online by Cambridge University Press:  10 February 2011

Ping Han ,
Mang Wu ,
Junru Ma ,
XiaoDong Huang ,
Hao Chen ,
Liqun Hu  and
Youdou Zheng
Ping Han
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
Mang Wu
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
Junru Ma
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
XiaoDong Huang
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
Hao Chen
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
Liqun Hu
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
Youdou Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
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Abstract

In this paper, we report on the experiment results of wet oxidation of Si1-xGex on SiO2. AES and XPS measurements were performed to study the effect of the oxidation on the Si1-xGex layer. A possible mechanism was proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 343
Copyright
Copyright © Materials Research Society 1997

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References

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