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X-Ray Diffraction Study of Inalas-Ingaas on Inp High Electron Mobility Transistor Structure Prepared by Molecular-Beam Epitaxy

Published online by Cambridge University Press:  28 February 2011

H.Y. Liu ,
Y.C. Kao  and
T.S. Kim
H.Y. Liu
Affiliation:
Central Research Laboratories, Texas Instruments Inc., P.O. Box 655936, MS 147, Dallas, TX. 75265
Y.C. Kao
Affiliation:
Central Research Laboratories, Texas Instruments Inc., P.O. Box 655936, MS 147, Dallas, TX. 75265
T.S. Kim
Affiliation:
Central Research Laboratories, Texas Instruments Inc., P.O. Box 655936, MS 147, Dallas, TX. 75265
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Abstract

High-Electron Mobility Transistors (HEMTs) can be prepared by growing alternating epitaxial layers of InAlAs and InGaAs on InP substrates. Lattice matched HEMTs are obtained by growing layers of InxAl(1-x)As and InyGa(1-y)As with x ≃ 0.5227 and y ≃ 0.5324. Varying the values of x and y by controlling the individual flux during molecular-beam epitaxial (MBE) growth, one can obtain pseudomorphic HEMTs. Pseudomorphic HEMTs may have superior electronic transport properties and larger conduction band discontinuity when compared to an unstrained one. The precise control of the composition is thus important to the properties of HEMTs. This control is however very difficult and the values of x and y may vary from run to run.

We will demonstrate in this paper the capability of a double crystal rocking curve (DCRC) on the structure characterization. All the structure information: including composition and thickness of both the buffer and top InAlAs layers and the active channel InGaAs layer, can be obtained from one x-ray diffraction measurement. It is accomplished through a computer simulation process of DCRCs. The structure parameters of the epitaxial layers are used to calculate (simulate) the DCRCs. The simulated one is then to compare with the experimental curves. During the simulation one or more of these structure parameters are adjusted until the best fitted DCRC is obtained. The limitation of DCRC in measuring small variations in layer thickness as well as the small changes in composition for both InAlAs and InGaAs layers will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 771
Copyright
Copyright © Materials Research Society 1990

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References

1Hiyamizu, S., Fujii, T., Muto, S., Inata, T., Nakata, Y., Sugiyama, Y. and Sasa, S., J. Crystal Growth, 81, 349 (1987)Google Scholar
2Brown, A.S., Mishra, U.K., Henige, J.A. and Delaney, M.J., J. Vac. Sic. Technol. B Vol.6 No.2, 676 (1988)Google Scholar
3Kuo, J.M., Feuer, M.D. and Chang, T.Y., J. Vac. Sic. Technol. B Vol.6 no.2, 657 (1988)Google Scholar
4Kao, Y.C., Seabaugh, A.C., Liu, H.Y., Kim, T.S., Reed, M.A., Saunier, P., Bayrak-taroglu, B. and Duncan, W.M., to be published in SPIE Proceedings of the 1st international conference of InP and related materials, Norman, OK. (1989)Google Scholar
5Griem, H.T., Hsieh, K.H., D’Haenens, I.J., Delaney, M.J., Henige, J.A., Wicks, G.W. and Brown, A.S., J. Vac. Set. Technol. B, Vol.5 785 (1987)Google Scholar
6Macrander, A.T., Minami, E.R. and Berreman, D.W., J. Appl. Phys. 60 (4), 1364 (1986)Google Scholar
7Davey, S.T., Halliwell, M.A.G., Rogers, D.C., Taylor, M.R. and Scott, E.G., J. of Crystal Growth, 96, 258 (1989)Google Scholar
8Chu, X. and Tanner, B.K., Appl. Phys. Lett. 49 (26), 1773 (1986)Google Scholar
9Bensoussan, S., Malgrange, C. and Sauvage-Simkin, M., J. Appl. Cryst. 20, 222 (1987)Google Scholar
10Halliwell, M.A.G. and Lyons, M.H., J. of Crystal Growth, 68, 523 (1984)Google Scholar
11Cembali, F. and Servidori, M., J. Appl. Cryst. 22 345 (1989)Google Scholar
12Taupin, D., Bull. Soc. Fr. Mineral. Crystallogr., 87, 469 (1964)Google Scholar
13 BEDE Scientific Instruments Ltd., Durham EnglandGoogle Scholar
14Bartels, W.J. and Nijman, W., J. of Crystal Growth 44, 518, 1978Google Scholar
15 JCPDS, Joint Committee of Powder Diffraction Standards, Swarthmore PA.Google Scholar