Skip to main content
×
×
Home

X-ray Diffraction Study of InGaN/GaN Superlattice Implanted with Eu3+ Ions

  • Mohammad Ahmad Ebdah (a1), Martin E. Kordesch (a2), Andre Anders (a3) and Wojciech M. Jadwisienczak (a4)
Abstract

In this work, europium implanted InGaN/GaN SL with a fixed well/barrier thickness ratio grown by metal-organic chemical-vapor deposition (MOCVD) on GaN/(0001) sapphire substrate were investigated. The as-grown and Eu ion implanted InGaN/GaN SLs were annealed at different temperatures ranging from 600°C to 950°C in nitrogen ambient. The quality of the SL interfaces in undoped and implanted structures has been investigated by X-ray diffraction (XRD) at room temperature. The characteristic satellite peaks of SLs were measured for the (0002) reflection up to the second order in the symmetric Bragg geometry. The XRD simulation spectrum of the as-grown SL agrees well with the experimental results. The simulation results show x=0.06 atomic percent the InGaN well sub-layers, with thicknesses of 2.4 and 3.3 nm for single InGaN well and GaN barrier, respectively. It was observed that annealing of the undoped SL does not significantly affect the interfacial quality of the superstructure, whereas, the Eu ion implanted InGaN/GaN SL undergo partial induced degradation. Annealing the implanted SLs shows a gradual improvement of the multilayer periodicity and a reduction of the induced degradation with increasing the annealing temperature as indicated by the XRD spectra.

Copyright
References
Hide All
1Steckl, A., and Zavada, J., MRS Bull. 24, 33 (1999).
2Lozykowski, H., Jadwisienczak, W., and Brown, I., Appl. Phys. Lett. 74, 1129 (1999).
3Steckl, A., Park, J., and Zavada, J., Materials Today 10, 20 (2007).
4Dahal, R., Ugolini, C., Lin, J., Jiang, H., and Zavada, J., Appl. Phys. Lett. 93, 033502 (2008).
5Nakamura, S., Mukai, T., and Senoh, M., Appl. Phys. Lett. 64, 1687 (1994).
6Amano, H., Tanaka, T., Kunii, Y., Kim, S. T., and Akasaki, I., Appl. Phys. Lett. 64, 1377 (1994).
7Khan, M. Asif, Krishnankutty, S., Skogman, R. A., Kuznia, J. N., Olson, D. T., and George, T., Appl. Phys. Lett. 65, 520 (1994).
8Singh, R., Doppalapudi, D., Moustakas, T. D., and Romano, L. T., Appl. Phys. Lett. 70, 1089 (1997).
9El-Masry, N. A., Piner, E. L., Liu, S. X., and Bedair, S. M., Appl. Phys. Lett. 72, 40 (1998).
10Ebdah, M. A., Hoy, D. R., and Kordesch, M. E., Mat. Res. Soc. Symp. Proc. 1151, SS0305, (2009).
11Gusev, O., Prineas, J., Lindmark, E., Bresler, M., Khitrova, G., Gibbs, H., Yassievich, I., Zakharchenya, B., and Masterov, V., J. Appl. Phys. 82, 1815 (1997).
12Masterov, V., and Gerchikov, L., Semiconductors 33, 616 (1999).
13Ebdah, M. A., Jadwisienczak, W. M., Kordesch, M. E., Ramadan, S., Morkoc, H., and Anders, A., Mat.Res. Soc. Symp. Proc. 1111, D0412 (2009).
14Lozykowski, H. J., and Jadwisienczak, W.M., Han, J., Brown, I.G., Appl. Phys. Lett. 77, 767 (2000).
15X'Pert Epitaxy software v.4.2 from PANalytical B. V., Netherlands, http://www.panalytical.com.
16Li, W., Bergman, P., Ivanov, I., Ni, W., Amano, H., and Akasa, I., Appl. Phys. Lett. 69, 22 (1996).
17Vegard, L., Z. Phys. 5, 17, (1921).
18Dyck, J., Kash, K., Hayman, C., Argoitia, A., Grossner, M., Angus, J., and Zhou, Wei-Lie, J. Mater. Res. 14, 2411 (1999).
19Angerer, H. et al, Appl. Phys. Lett. 71, 1504 (1997).
20Schuster, M., Gervais, P. O., Jobst, B., Hosler, W., Averbeck, R., Riechert, H., Iberi, A., and Stommer, R., J. Phys. D 32, A56 (1999).
21Wright, A., J. Appl. Phys. 82, 2833 (1997).
22Parker, C. A., Roberts, J. C., Bedair, S. M., Reed, M. J., Liu, S. X., and El-Masry, N. A., Appl. Phys. Lett. 75, 2776 (1999).
23Vickers, M. E., Kappers, M. J., Smeeton, T. M., Thrush, E. J., Barnard, J. S. and Humphreys, C. J., J. Appl. Phys. Lett. 94, 1565 (2003).
24Jin, C., Zhang, B., Ling, Z., Wang, J., Hou, X., Segawa, Y., Wang, X., J. Appl. Phys. 81, 8, (1997).
25Matthews, J. W. and Blakeslee, A. E., J. Cryst. Growth 27, 118 (1974).
26Whan, R. E. and Arnold, G. W., Appl. Phys. Lett. 17, 378 (1970).
27EerNisse, E. P., Appl. Phys. Lett. 18, 581 (1971); also E. P. EerNisse, Sandia Report SC-RR-710424 (1971).
28Myers, D. R., Gourely, P. L., and Peercy, P. S., J. Appl. Phys. 54, 5032 (1983).
29Myers, D. R., Picraux, S. T., Doyle, B. L., Arnold, G. W., and Biefeld, R. M., J. Appl. Phys. 60, 3631 (1986).
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed