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X-Ray Double Crystal Topography of Processed Silicon Wafers

Published online by Cambridge University Press:  26 February 2011

Neil Loxley  and
Brian K. Tanner
Neil Loxley
Affiliation:
Physics Department, University of Durham, South Road, Durham, DH1 3LE, U.K.
Brian K. Tanner
Affiliation:
Physics Department, University of Durham, South Road, Durham, DH1 3LE, U.K.
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Abstract

Double crystal topographs of a processed silicon device wafer, taken in highly asymmetric reflection conditions using synchrotron radiation are presented. By using a variety of wavelengths and reflections the depth and distribution of defects generated by the fabrication process are explored. Examples of several reflections are given, with a spatial resolution of better than 5 microns and extremely high device and defect visibility. Results suggest that a high mismatch of lattice parameter at device edges leads to the formation of dislocation loops penetrating junctions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 215
Copyright
Copyright © Materials Research Society 1987

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References

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