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X-Ray Reflectometry from Semiconductor Surfaces and Interfaces

Published online by Cambridge University Press:  21 February 2011

Brian K Tanner ,
Simon J Miles ,
D Keith Bowen ,
Linda Hart  and
Neil Loxley
Brian K Tanner
Affiliation:
Department of Physics, Durham University, South Road, Durham, DH1 3LE, UK
Simon J Miles
Affiliation:
Department of Physics, Durham University, South Road, Durham, DH1 3LE, UK
D Keith Bowen
Affiliation:
Department of Engineering, Warwick University, Coventry, CV4 7AL, UK
Linda Hart
Affiliation:
Department of Engineering, Warwick University, Coventry, CV4 7AL, UK
Neil Loxley
Affiliation:
Bede Scientific Instruments, Lindsey Park; Bowburn, Durham, DH6 5PF, UK
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Abstract

X-ray reflectance measurements at grazing incidence provide non-destructively a measure of the thickness of thin layers, the electron density as a function of depth, and interface and surface roughness. We show that the effect of roughness at a buried interface is only to reduce the visibility of the interference fringes, whereas roughness at the top surface leads also to an overall increase in the rate of fall of intensity with angle (or energy). These two contributions can then be readily distinguished.

Most work has been performed in monochromatic angular dispersive mode. We present here a preliminary study of the application of the high-energy, fixed-angle, energy dispersive mode for the study of thin epitaxial layers, Langmuir-Blodgett films, surface damage on silicon chemi-sol polished wafers and ion implanted silicon and aluminium. Data has been analysed using the theory of Parratt, which we have adapted for use in the energy dispersive method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 208: Symposium J – Advances in Surface and Thin Film Diffraction , 1990 , 345
Copyright
Copyright © Materials Research Society 1991

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References

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