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Z-contrast Imaging and EELS of Dislocation Cores at the Si/GaAs Interface

Published online by Cambridge University Press:  11 February 2011

S. Lopatin ,
G. Duscher ,
S. J. Pennycook  and
M. F. Chisholm
S. Lopatin
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh NC 27695
G. Duscher
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh NC 27695 Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN 37831
S. J. Pennycook
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN 37831
M. F. Chisholm
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN 37831
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Abstract

The interface between silicon and epitaxial GaAs thin film grown by metalorganic chemical vapor deposition was studied using atomic-resolution Z-contrast imaging. Z-contrast imaging provides chemical composition information and allows direct interpretation of micrographs. Electron energy loss spectroscopy (EELS) yields correlation between structure and chemistry. Different types of dislocation were identified at the Si/GaAs interface. Atomic structure of non-reconstructed 90° dislocation (exhibiting a dangling bond) is refined by means of computer simulations based on functional density theory. EELS form planar Si/GaAs interface and dislocation cores obtained and analyzed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M1.6
Copyright
Copyright © Materials Research Society 2003

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References

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