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ZnO Thin Film Transistors for Flexible Electronics

Published online by Cambridge University Press:  15 February 2011

P. F. Carcia ,
R. S. McLean ,
M.H. Reilly ,
I. Malajovich ,
K.G. Sharp ,
S. Agrawal  and
G. Nunes
P. F. Carcia
Affiliation:
DuPont Research & Development, Experimental Station, Wilmington, DE 19880-0356, USA
R. S. McLean
Affiliation:
DuPont Research & Development, Experimental Station, Wilmington, DE 19880-0356, USA
M.H. Reilly
Affiliation:
DuPont Research & Development, Experimental Station, Wilmington, DE 19880-0356, USA
I. Malajovich
Affiliation:
DuPont Research & Development, Experimental Station, Wilmington, DE 19880-0356, USA
K.G. Sharp
Affiliation:
DuPont Research & Development, Experimental Station, Wilmington, DE 19880-0356, USA
S. Agrawal
Affiliation:
DuPont Research & Development, Experimental Station, Wilmington, DE 19880-0356, USA
G. Nunes
Affiliation:
DuPont Research & Development, Experimental Station, Wilmington, DE 19880-0356, USA
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Abstract

In flexible electronics, plastic substrates can limit processing temperatures to less than 100° C. Consequently, most semiconductors, including amorphous silicon, may be incompatible with temperature-sensitive plastic substrates. While organic semiconductors may seem well suited to this particular application niche, their stability is questionable and their mobility is often low (∼0.1 cm2/V-s). In this paper we show that ZnO is a promising semiconductor candidate for flexible electronics, because thin film transistors can be fabricated at room temperature with higher mobility (> 1 cm2/V-s) and high on/off ratio (> 104).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 769: Symposium H – Flexible Electronics - Materials and Device Technology , 2003 , H7.2
Copyright
Copyright © Materials Research Society 2003

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