Skip to main content

ZNSE/III–V Heterostructures Grown in a Multichamber MBE System

  • M. C. Tamargo (a1), J. L. de Miguel (a1), D. M. Hwang (a1), B. J. Skromme (a1), M. H. Meynadier (a1), R. E. Nahory (a1) and H. H. Farrell (a1)...

We have grown ZnSe epitaxial layers on bulk GaAs substrates and on GaAs epitaxial layers, with both As-rich and Ga-rich surface terminations. We have also grown ZnSe on AlAs epitaxial surfaces with different As to Al ratios. In all cases, abrupt, layer-by-layer growth is observed on the As-rich surfaces, while 3-dimensional nucleation is observed on the group III-rich surfaces. GaAs was also grown on ZnSe layers. In this case, microtwins form at the interface whose density diminishes as the layer is made thicker. A growth model is proposed consistent with these results which requires over-all electronic balance at the interface.

Hide All
1. Tamargo, M. C., de Miguel, J. L., Hwang, D. M. and Farrell, H. H., J. Vac. Sci. Technol. B, Mar.-Apr. (1988).
2. Massies, J., Etienne, P., Dezaly, F. and Linh, N. T., Surf. Sci. 99, 121 (1980).
3. de Miguel, J. L., Tamargo, M. C., unpublished.
4. Farrell, H. H., Tamargo, M. C., de Miguel, J. L., J. Vac. Sci. Technol. B, Mar.–Apr. (1988).
5. Harrison, W. A., Kraut, E. A., Waldrop, J. R. and Grant, R. W., Phys. Rev. B 18, 4402 (1978).
6. Tu, D.-W. and Kahn, A., J. Vac Sci. Technol. A 3, 922 (1985).
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *


Full text views

Total number of HTML views: 0
Total number of PDF views: 3 *
Loading metrics...

Abstract views

Total abstract views: 57 *
Loading metrics...

* Views captured on Cambridge Core between September 2016 - 26th September 2018. This data will be updated every 24 hours.