This work shows a comprehensive atomistic model to describe amorphization and recrystallization, and its different effects on dopants in silicon. We begin by describing the physical basis of the model used, based on the transformation of ion-implanted dopants and generated point defects into amorphous pockets of different sizes. The growth and dissolution of amorphous pockets is simulated by the capture and recombination of point defects with different activation energies. In some cases, this growth leads to the formation of amorphous layers. These layers, composed of a set of amorphous elements, have an activation energy to be recrystallized. The recrystallization velocity is modeled not only depending on temperature, but also on dopant concentration. During the recrystallization, dopants move with the recrystallization front to simulate the dopant redistribution during solid phase epitaxial regrowth (SPER). At the edge of the amorphous-crystalline interface, the remaining damage forms end-of-range (EOR) defects.
Once the model is explained, we discuss the calibration methodology used to reproduce several amorphous/crystalline (A/C) experiments, including the dependencies of the A/C transition temperature on dose rate and ion mass, and the A/C depth on ion implant energy.
This calibrated model allows us to explore the redistribution of several dopants, including B, As, F, and In, during SPER. Experimental results for all these dopants are compared with relevant simulations.