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X-ray diffraction imaging for predictive metrology of crack propagation in 450-mm diameter silicon wafers

Published online by Cambridge University Press:  19 April 2013

B.K. Tanner*
Affiliation:
Department of Physics, Durham University, South Road, Durham DH1 3LE, UK
J. Wittge
Affiliation:
University of Freiburg, Kristallographie, Geowissenschaftliches Institut, Freiburg, Germany
P. Vagovič
Affiliation:
Karlsruhe Institute of Technology, Institut für Synchrotronstrahlung, Karlsruhe, Germany
T. Baumbach
Affiliation:
Karlsruhe Institute of Technology, Institut für Synchrotronstrahlung, Karlsruhe, Germany
D. Allen
Affiliation:
Dublin City University, School of Electronic Engineering, Dublin 9, Ireland
P.J. McNally
Affiliation:
Dublin City University, School of Electronic Engineering, Dublin 9, Ireland
R. Bytheway
Affiliation:
Jordan Valley Semiconductors UK Ltd, Durham DH1 1TW, UK
D. Jacques
Affiliation:
Jordan Valley Semiconductors UK Ltd, Durham DH1 1TW, UK
M.C. Fossati
Affiliation:
Department of Physics, Durham University, South Road, Durham DH1 3LE, UK
D.K. Bowen
Affiliation:
Department of Physics, Durham University, South Road, Durham DH1 3LE, UK
J. Garagorri
Affiliation:
CEIT and Tecnun (University of Navarra), 20018 San Sebastián, Spain
M.R. Elizalde
Affiliation:
CEIT and Tecnun (University of Navarra), 20018 San Sebastián, Spain
A.N. Danilewsky
Affiliation:
University of Freiburg, Kristallographie, Geowissenschaftliches Institut, Freiburg, Germany
*
a)Author to whom correspondence should be addressed. Electronic mail: b.k.tanner@dur.ac.uk

Abstract

The apparatus for X-ray diffraction imaging (XRDI) of 450-mm wafers, is now placed at the ANKA synchrotron radiation source in Karlsruhe, is described in the context of the drive to inspect wafers for plastic deformation or mechanical damage. It is shown that full wafer maps at high resolution can be expected to take a few hours to record. However, we show from experiments on 200-, 300-, and 450-mm wafers that a perimeter-scan on a 450-mm wafer, to pick up edge damage and edge-originated slip sources, can be achieved in just over 10 min. Experiments at the Diamond Light Source, on wafers still in their cassettes, suggest that clean-room conditions may not be necessary for such characterization. We conclude that scaling up of the 300-mm format Jordan Valley tools, together with the existing facility at ANKA, provides satisfactory capability for future XRDI analysis of 450-mm wafers.

Type
Technical Articles
Copyright
Copyright © International Centre for Diffraction Data 2013 

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X-ray diffraction imaging for predictive metrology of crack propagation in 450-mm diameter silicon wafers
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