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X-ray diffraction imaging of dislocation generation related to microcracks in Si wafers

Published online by Cambridge University Press:  29 February 2012

J. Wittge
Affiliation:
Kristallographie, Geowiss. Institut, University Freiburg, Freiburg, Germany
A. Danilewsky
Affiliation:
Kristallographie, Geowiss. Institut, University Freiburg, Freiburg, Germany
D. Allen
Affiliation:
Research Institute for Networks and Communications Engineering, Dublin City University, Dublin, Ireland
P. McNally
Affiliation:
Research Institute for Networks and Communications Engineering, Dublin City University, Dublin, Ireland
Z. J. Li
Affiliation:
Research Centre Karlsruhe, Institut für Synchrotronstrahlung, Karlsruhe, Germany
T. Baumbach
Affiliation:
Research Centre Karlsruhe, Institut für Synchrotronstrahlung, Karlsruhe, Germany
E. Gorostegui-Colinas
Affiliation:
Centro de Estudios e Investigaciones Tecnicas de Gipuzkoa, San Sebastian, Spain
J. Garagorri
Affiliation:
Centro de Estudios e Investigaciones Tecnicas de Gipuzkoa, San Sebastian, Spain
M. R. Elizalde
Affiliation:
Centro de Estudios e Investigaciones Tecnicas de Gipuzkoa, San Sebastian, Spain
D. Jacques
Affiliation:
Jordan Valley Semiconductor (UK), Durham DH1 1TW, United Kingdom
M. C. Fossati
Affiliation:
Department of Physics, Durham University, South Road, Durham DH1 3LE, United Kingdom
D. K. Bowen
Affiliation:
Department of Physics, Durham University, South Road, Durham DH1 3LE, United Kingdom
B. K. Tanner*
Affiliation:
Department of Physics, Durham University, South Road, Durham DH1 3LE, United Kingdom
*
Author to whom correspondence should be addressed. Electronic mail: b.k.tanner@durham.ac.uk

Abstract

The nucleation of dislocations at indents in silicon following rapid thermal annealing (RTA) has been examined by X-ray diffraction imaging (topography). For indentation loads below 200 mN, no slip bands were generated from the indent sites following RTA at 1000 °C under spike conditions. Upon plateau annealing at 1000 °C, slip dislocations were propagated from some indents but not all. Slip was also observed from edge defects not associated with indentation. For 500-mN indentation load, large scale dislocation sources were generated from the indent sites propagating on two of the four {111} slip planes. These dislocations multiplied into macroscopic-scale slip bands. A significant change in morphology was observed in the 60° dislocation segments after the screw segment reached the rear surface of the wafer. Dislocations changed line direction and in some cases appeared to leave the Peierls trough during glide.

Type
Technical Articles
Copyright
Copyright © Cambridge University Press 2010

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References

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