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Powder X-ray diffraction data for the new polymorphic compound ω-Bi2O3

Published online by Cambridge University Press:  10 January 2013

A. F. Gualtieri ,
S. Immovilli  and
M. Prudenziati
A. F. Gualtieri
Affiliation:
Dipartimento di Scienze della Terra, Università di Modena, Largo S. Eufemia, 19, Modena 41100, Italy
S. Immovilli
Affiliation:
Istituto Nazionale per la Fisica della Materia (INFM) and Dipartimento di Fisica, Università di Modena, Via Campi 213/A, 19, Modena, 41100, Italy
M. Prudenziati
Affiliation:
Istituto Nazionale per la Fisica della Materia (INFM) and Dipartimento di Fisica, Università di Modena, Via Campi 213/A, 19, Modena, 41100, Italy
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Abstract

A Bi2O3 compound which is unknown to date has been synthesized at 800 °C on a BeO substrate. α-Bi2O3 at 800 °C undergoes a phase transition to a metastable new compound named ω-Bi2O3 which in turn transforms to stable δ-Bi2O3 at 900 °C. X-ray powder diffraction data were collected, indexed, and refined in order to obtain a unit cell (probable space group P1¯: a=7.2688(4), b=8.6390(6), c=11.9698(8) Å, α=87.713(6), β=93.227(6), γ =86.653(4)°. This compound is of interest for the thick films circuits and sensors technology.

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Type
Research Article
Information
Powder Diffraction , Volume 12 , Issue 2 , June 1997 , pp. 90 - 92
Copyright
Copyright © Cambridge University Press 1997

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References

Aurivillius, B., and Sillen, L. G. (1945). “The structure of γ-Bi 2O 3,” Nature (London) 155, 305–306.Google Scholar
Bokii, G. B. (1954). Introduction to Chemical Crystallography (Izd. Mosk. Univ., Moscow).Google Scholar
Gattow, G., and Schröder, H. (1962). “Die kristallstruktur der hoch temperature modifikation von wismut(III)-oxid (δ-Bi 2O 3),” Z. Anorg. Allg. Chem. 318, 176–189.CrossRefGoogle Scholar
Holmes, P. J., and Loasby, R. G. (1976). Handbook of Thick Film Technology (Electrochemical).Google Scholar
Immovilli, S. (1996). “Interazioni tra ossido di bismuto e substrati ceramici,” Univ. degree thesis, The University of Modena, Italy.Google Scholar
Langford, J. I. (1971). “Powder pattern programs,” J. Appl. Crystallogr. 4, 259–260.CrossRefGoogle Scholar
Langford, J. I. (1973). “The accuracy of cell dimensions determined by Cohen's method of least squares and the systematic indexing of powder data,” J. Appl. Crystallogr. 6, 190–196.Google Scholar
Malmros, G. (1970). “The crystal structure of α-Bi 2O 3,” Acta Chem. Scand. 24, 384–396.CrossRefGoogle Scholar
Prudenziati, M. (1994). Thick Film Sensors, edited by M. Prudenziati (Elsevier, Amsterdam).Google Scholar
Sillen, L. G. (1941). “On the crystal structure of monoclinic α-Bi 2O 3,” Z. Kristallogr. 103, 274–290.Google Scholar
Werner, P. E. (1964). “Trial-and-error computer methods for the indexing of unknown powder patterns,” Z. Kristallogr. 120, 375–387.CrossRefGoogle Scholar
Zav’jalova, A., Imamov, R., and Pinsker, Z. (1964). “An electron diffraction studi of the thin films in the Bi-O system,” Kristallografiya 9, 857–863.Google Scholar