Hostname: page-component-cb9f654ff-5kfdg Total loading time: 0 Render date: 2025-08-19T09:45:25.124Z Has data issue: false hasContentIssue false
  • English
  • Français

Calculation of boron segregation at the Si(100)/SiO2interface

Published online by Cambridge University Press:  15 July 2004

M. Furuhashi ,
T. Hirose ,
H. Tsuji ,
M. Tachi  and
K. Taniguchi
M. Furuhashi*
Affiliation:
Department of Electronics and Information Systems, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
T. Hirose
Affiliation:
Department of Electronics and Information Systems, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
H. Tsuji
Affiliation:
Department of Electronics and Information Systems, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
M. Tachi
Affiliation:
Department of Electronics and Information Systems, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
K. Taniguchi
Affiliation:
Department of Electronics and Information Systems, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
*
furuhashi@eie.eng.osaka-u.ac.jp
Get access

Abstract


The stability of B atom near the Si(100)/SiO2 interface during annealing is studied by using ab initio calculation to investigate the atomic scale mechanism of B segregation at the Si(100)/SiO2 interface. Contrary to the experimental observations showing that B atoms segregate into SiO2, B atoms are found to be stable in Si free of defects. But authors can rephrase differently this sentence. On the other hand, when an O vacancy exists in SiO2, the B atom is trapped by the O vacancy and becomes quite stable in SiO2.

Keywords

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

The International Technology Roadmap for Semiconductors (Semiconductor Industries of America, 2001) .1
Vuong, H.-H., Rafferty, C. S., Eshraghi, S. A., Lentz, J. L., Zeitzoff, P. M., Pinto, M. R., Hillenius, S. J., IEEE Trans. Electron Devices 43, 1144 (1996) CrossRef
Kasnavi, R., Sun, Y., Mo, R., Pianetta, P., Griffin, P. B., Plummer, J. D., J. Appl. Phys. 87, 2255 (2000) CrossRef
J. D. Plummer, M. D. Deal, P. B. Griffin, Silicon VLSI Technology (Prentice Hall, NJ, 2000)
Fair, R. B., J. Electrochem. Soc. 144, 708 (1997) CrossRef
Morgan, A. E., Chen, T-Y. J., Reed, D. A., Baker, J. E., J. Vac. Sci. Technol. A 2, 1266 (1984) CrossRef
Baierle, R., Caldas, M. J., Dabrowski, J., Mussig, H.-J., Zavodinsky, V., Physica B 274, 260 (1999) CrossRef
Dabrowski, J., Casali, R. A., Mussig, H.-J., Baierle, R., Caldas, M. J., Zavodinsky, V., J. Vac. Sci. Technol. B 18, 2160 (2000) CrossRef
Kaplan, T., Liu, F., Mostoller, M., Chisholm, M. F., Milman, V., Phys. Rev. B 61, 1674 (2000) CrossRef
Shima, A., Jinbo, T., Natsuaki, N., Ushio, J., Oh, J.-H., Ono, K., Oshima, M., J. Appl. Phys. 89, 3458 (2001) CrossRef
Yamasaki, T., Kaneta, C., Uchiyama, T., Uda, T., Terakura, K., Phys. Rev. B 63, 115314 (2001) CrossRef
Pasquarello, A., Hybertsen, M. S., Car, R., Appl. Phys. Lett. 68, 625 (1996) CrossRef
Ourmazd, A., Taylor, D. W., Rentschler, J. A., Bevk, J., Phys. Rev. Lett. 59, 213 (1987) CrossRef
Vanderbilt, D., Phys. Rev. B 41, 7892 (1990) CrossRef
Maroudas, D., Pantelides, S. T., Chem. Eng. Sci. 49, 3001 (1994) CrossRef
Monkhorst, H. J., Pack, J. D., Phys. Rev. B 13, 5188 (1976) CrossRef
W. Windl, IEICE Trans. Electron. E86-C, 269 (2003)
Xia, J., Saito, T., Kim, R., Aoki, T., Kamakura, Y., Taniguchi, K., J. Appl. Phys. 85, 7597 (1999) CrossRef
T. Saito, J. Xia, R. Kim, T. Aoki, H. Kobayashi, Y. Kamakura, K. Taniguchi, IEDM Tech. Dig. 497 (1998)