Non destructive techniques like scanning infrared microscopy and light beam induced current mapping are used to reveal the presence of stacking faults in heat treated Czochralski grown silicon wafers. In oxidized or contaminated samples, scanning infrared microscopy reveals that stacking faults grow around oxygen precipitates. This could be due to an aggregation of silicon self-interstitials emitted by the growing precipitates in the (111) plane. Light beam induced current maps show that the dislocations which surround the stacking faults are the main source of recombination centers, especially when they are decorated by a fast diffuser like copper.