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Analytical calculation of site and surface reaction probabilities of SiHx radicals in PECVD process

Published online by Cambridge University Press:  20 March 2013

Oumelkheir Babahani ,
Fethi Khelfaoui  and
Mohammed Tayeb Meftah
Oumelkheir Babahani
Affiliation:
Laboratoire LRPPS, Faculté des Sciences et de la Technologie et des Sciences de la Matière, Université Kasdi Merbah Ouargla, Ouargla 30000, Algeria
Fethi Khelfaoui*
Affiliation:
Laboratoire LRPPS, Faculté des Sciences et de la Technologie et des Sciences de la Matière, Université Kasdi Merbah Ouargla, Ouargla 30000, Algeria
Mohammed Tayeb Meftah
Affiliation:
Laboratoire LRPPS, Faculté des Sciences et de la Technologie et des Sciences de la Matière, Université Kasdi Merbah Ouargla, Ouargla 30000, Algeria
*
ae-mail: fethi.khelfaoui@gmail.com; khelfaoui.fe@univ-ouargla.dz
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Abstract

In this work we present a theoretical and mathematical relationship which calculates the site reaction probability (SRP) of the sticking on (Si-) dangling bonds (DB) or the SRP to abstract H from (Si-H) bonds, on the a-Si:H surface. The results are in agreement with those obtained by the Monte Carlo simulation. Using these probabilities allowed us to compute the surface reaction probability of SiHx radicals on a-Si:H for several values of the temperature. The surface reaction probability (SFRP) results show also an excellent agreement with other works found in the literature.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 62 , Issue 1 , April 2013 , 10301
Copyright
© EDP Sciences, 2013

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