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Atomic-scale analysis of interfaces in an all-oxide magnetic tunnel junction

Published online by Cambridge University Press:  03 October 2003

J.-L. Maurice*
Affiliation:
Unité Mixte de Physique CNRS/Thales, 91404 Orsay, France
F. Pailloux
Affiliation:
Unité Mixte de Physique CNRS/Thales, 91404 Orsay, France
D. Imhoff
Affiliation:
Laboratoire de Physique des Solides, Université Paris-Sud, 91405 Orsay, France
N. Bonnet
Affiliation:
UMR-S INSERM 514 and LERI, University of Reims, 51092 Reims Cedex, France
L. Samet
Affiliation:
Laboratoire de Physique des Solides, Université Paris-Sud, 91405 Orsay, France
A. Barthélémy
Affiliation:
Unité Mixte de Physique CNRS/Thales, 91404 Orsay, France
J.-P. Contour
Affiliation:
Unité Mixte de Physique CNRS/Thales, 91404 Orsay, France
C. Colliex
Affiliation:
Laboratoire de Physique des Solides, Université Paris-Sud, 91405 Orsay, France
A. Fert
Affiliation:
Unité Mixte de Physique CNRS/Thales, 91404 Orsay, France
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Abstract

We use High Resolution Electron Microscopy (HRTEM) together with Electron Energy Loss Spectroscopy (EELS) to analyze the crystallography and the chemical configuration of interfaces in a state-of-the-art La2/3Sr1/3MnO3/SrTiO3/La2/3Sr1/3MnO3 tunnel junction. EELS indicates that manganese ions keep their bulk valency up to the last atomic plane in contact with the insulator. Tunnel magnetoresistance however decreases with temperature faster than magnetisation in these samples. Quantitative HRTEM reveals some local departures from chemical abruptness at the interfaces, which could play a role in this decrease.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2003

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References

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