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Influence of long-term defect diffusion on HgCdTe electronic structure

Published online by Cambridge University Press:  15 July 2004

M. Pociask ,
B. Pukowska ,
A. Kisiel ,
E. M. Sheregii  and
N. N. Berchenko
M. Pociask*
Affiliation:
Institute of Physics, University of Rzeszów, 16A2 Rejtana Str., 35-310 Rzeszów, Poland
B. Pukowska
Affiliation:
Institute of Physics, Jagiellonian University, 4 Reymonta Str., 30-059 Kraków, Poland
A. Kisiel
Affiliation:
Institute of Physics, Jagiellonian University, 4 Reymonta Str., 30-059 Kraków, Poland
E. M. Sheregii
Affiliation:
Institute of Physics, University of Rzeszów, 16A2 Rejtana Str., 35-310 Rzeszów, Poland
N. N. Berchenko
Affiliation:
Institute of Physics, University of Rzeszów, 16A2 Rejtana Str., 35-310 Rzeszów, Poland
*
pociask@univ.rzeszow.pl
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Abstract

The long-term diffusion processes of defects in HgxCd$_{1-x}$Te mixed crystals were investigated. Measurements of reflectivity and surface characterisation by means of scanning electron microscopy (SEM) were performed for samples with x = 0.4 and x = 0.62. The experiments were repeated after wet chemical etching. Optical results were compared with the reflectivity spectra obtained 20 years ago using the same samples of investigated material. We discuss the observed large changes in the optical spectra on the basis of comparative analysis and SEM results.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 403 - 406
Copyright
© EDP Sciences, 2004

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