Hostname: page-component-76fb5796d-vfjqv Total loading time: 0 Render date: 2024-04-26T08:32:08.969Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation on base surface recombination in Self Passivated GaAlAs/GaInP/GaAs Heterojunction Bipolar Transistor

Published online by Cambridge University Press:  15 October 1998

R. Bourguiga ,
H. Sik  and
A. Scavennec
R. Bourguiga
Affiliation:
Faculté des Sciences de Bizerte, 7021 Zarzouna-Bizerte, Tunisia
H. Sik
Affiliation:
France Telecom, Centre National d'Études des Télécommunications, Paris B Laboratoire de Bagneux, 196 avenue Henri Ravera, BP 107, 92225 Bagneux Cedex, France
A. Scavennec
Affiliation:
France Telecom, Centre National d'Études des Télécommunications, Paris B Laboratoire de Bagneux, 196 avenue Henri Ravera, BP 107, 92225 Bagneux Cedex, France
Get access

Abstract

The dependence of the current gain with the size of the emitter-base junction of double mesa Self Passivated Heterojunction Bipolar Transistors (SP-HBT) has been investigated, the extrinsic base layer being passivated with a n-type GaInP layer. The current gain is widely improved, due to a 18-fold reduction of the surface recombination in the extrinsic base region with respect to unpassivated HBT. The surface recombination current ideality factor has been found to be 1.13.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 4 , Issue 1 , October 1998 , pp. 27 - 29
Copyright
© EDP Sciences, 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)