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Low temperature electrical transport properties in p-SnSe single crystals

Published online by Cambridge University Press:  23 December 2010

C. K. Sumesh ,
M. Patel ,
K. D. Patel ,
G. K. Solanki ,
V. M. Pathak  and
R. Srivastav
C. K. Sumesh*
Affiliation:
Department of Physics, Charotar University of Science and Technology, CHARUSAT, Changa, Anand, 388420, India
M. Patel
Affiliation:
Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Anand, 388120 Gujarat, India
K. D. Patel
Affiliation:
Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Anand, 388120 Gujarat, India
G. K. Solanki
Affiliation:
Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Anand, 388120 Gujarat, India
V. M. Pathak
Affiliation:
Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Anand, 388120 Gujarat, India
R. Srivastav
Affiliation:
Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Anand, 388120 Gujarat, India
*
cksumesh.cv@ecchanga.ac.in
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Abstract

The electronic transport properties of p-type tin selenide (SnSe) grown by direct vapor transport (DVT) technique were investigated via Hall effect in the temperature range 40 <T< 300 K. The temperature dependence of conductivity revealed the existence of impurity energy level in the band gap of the crystal. The temperature dependence of the carrier concentration was analyzed using the single-donor – single-acceptor model. The Hall mobility increases by decreasing temperature up to 120 K and then decreases along with temperature. The observed temperature dependant mobility in the temperature range 120 <T< 300 K and 40 <T< 120 K was found to be limited by homopolar and ionized impurity mode scatterings respectively.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 53 , Issue 1 , January 2011 , 10302
Copyright
© EDP Sciences, 2010

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