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Redistribution of nitrogen localized states in GaAsN layer doped Silicon

Published online by Cambridge University Press:  13 June 2007

A. Hamdouni ,
N. Ben Sedrine ,
J. C. Harmand  and
R. Chtourou
A. Hamdouni*
Affiliation:
Laboratoire de Photovoltaïque et de Semiconducteur, Institut National de Recherche Scientifique et Technique, BP 95, Hammam-Lif 2050, Tunisia
N. Ben Sedrine
Affiliation:
Laboratoire de Photovoltaïque et de Semiconducteur, Institut National de Recherche Scientifique et Technique, BP 95, Hammam-Lif 2050, Tunisia
J. C. Harmand
Affiliation:
Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France
R. Chtourou
Affiliation:
Laboratoire de Photovoltaïque et de Semiconducteur, Institut National de Recherche Scientifique et Technique, BP 95, Hammam-Lif 2050, Tunisia
*
Abdellatif.Hamdouni@fst.rnu.tn
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Abstract

Si-doped and undoped GaAs1-xNx layers are grown by molecular beam epitaxy (MBE) on GaAs(001) substrate with low nitrogen content. The Si-doped effect has been analyzed by photoluminescence (PL) measurements. At low laser power excitation the PL spectra of undoped layer are formed by GaAsN band level and several features attributed to the nitrogen localized states. For Si-doped layer, the GaAs1-xNxNx band level disappears and the large band attributed to the nitrogen localized states changes the form. At high laser power excitation, the PL spectrum is formed by only one peak corresponding to the most dominating nitrogen localized state. By comparing the doped and undoped layers, we note that the presence of silicon in the structure reduce the exciton bound energy to the nitrogen localized states.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 38 , Issue 3 , June 2007 , pp. 221 - 225
Copyright
© EDP Sciences, 2007

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