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The set of photoelectromagnetic methods for determination of recombination and diffusion parameters of p-MCT thin films

Published online by Cambridge University Press:  18 June 2013

D.Y. Protasov ,
A.V. Trifanov  and
V.Y. Kostyuchenko
D.Y. Protasov*
Affiliation:
Rzhanov Institute of Semiconductor Physics, pr. Lavrentieva, 13, Novosibirsk 630090, Russia
A.V. Trifanov
Affiliation:
Siberian State Geodetic Academy, Plakhotnov str., 8, Novosibirsk 630108, Russia
V.Y. Kostyuchenko
Affiliation:
Siberian State Geodetic Academy, Plakhotnov str., 8, Novosibirsk 630108, Russia
*
a e-mail: protasov@isp.nsc.ru
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Abstract

In this paper the set of photoelectromagnetic methods for determination of recombination and diffusion parameters of charge carriers in p-type mercury cadmium telluride epitaxial thin films at temperature range 77–125 K is offered. The set of methods includes the photoconductivity in magnetic field for Faraday and Voigt geometries, the photoelectromagnetic effect, the Hall effect and the measurements of magnetoconductivity. Such films parameters as concentrations and mobilities of heavy and light holes, mobility of minor electrons, electrons lifetime and ratio between holes and electrons lifetimes, surface recombination velocities can be determined with help of offered set.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 62 , Issue 3 , June 2013 , 30104
Copyright
© EDP Sciences, 2013

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