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Simulation of 2D quantum effects in ultra-short channel MOSFETs by a finite element method*

Published online by Cambridge University Press:  15 August 2001

A. Poncet ,
C. Faugeras  and
M. Mouis
A. Poncet*
Affiliation:
Laboratoire de Physique de la Matière (UMR-CNRS 5511), INSA-Lyon, 20 avenue Albert Einstein, 69621 Villeurbanne, France
C. Faugeras
Affiliation:
Laboratoire de Physique de la Matière (UMR-CNRS 5511), INSA-Lyon, 20 avenue Albert Einstein, 69621 Villeurbanne, France
M. Mouis
Affiliation:
Laboratoire de Physique de la Matière (UMR-CNRS 5511), INSA-Lyon, 20 avenue Albert Einstein, 69621 Villeurbanne, France
*
poncet@lpm.insa-lyon.fr
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Abstract

This paper presents a flexible numerical technique which is especially suited to analyze lateral modulation of quantum effects in short channel MOS transistors. We discuss boundary conditions for the Schrödinger equation and the impact of the finite element meshing. We show how channel length shortening alters the sub-band structure, thus giving an evaluation of the limits of a 1D quantum approach.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 15 , Issue 2 , August 2001 , pp. 117 - 121
Copyright
© EDP Sciences, 2001

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Footnotes

*

This paper has been presented at 3es Journées Nationales “Hétérostructures à semiconducteurs IV-IV” , Orsay, July 2000.

References

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