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Study of the substitution effect of Mn doped in ZnO matrix

Published online by Cambridge University Press:  23 April 2010

O. Karzazi
Affiliation:
LPS, Physics Department, Faculty of Sciences, BP 1796, Fès, Morocco
A. Chahboun*
Affiliation:
LPS, Physics Department, Faculty of Sciences, BP 1796, Fès, Morocco Physics Department, University of Minho, 4710-057 Braga, Portugal
A. G. Rolo
Affiliation:
Physics Department, University of Minho, 4710-057 Braga, Portugal
E. K. Hlil
Affiliation:
Institut Néel, CNRS, Université J. Fourier, BP 166, 38042 Grenoble, France
N. Benzakour
Affiliation:
LPS, Physics Department, Faculty of Sciences, BP 1796, Fès, Morocco
K. Bouslykhane
Affiliation:
LPS, Physics Department, Faculty of Sciences, BP 1796, Fès, Morocco
A. Hourmatallah
Affiliation:
LPS, Physics Department, Faculty of Sciences, BP 1796, Fès, Morocco
S. Levichev
Affiliation:
Physics Department, University of Minho, 4710-057 Braga, Portugal
A. Khodorov
Affiliation:
Physics Department, University of Minho, 4710-057 Braga, Portugal
M. J.M. Gomes
Affiliation:
Physics Department, University of Minho, 4710-057 Braga, Portugal
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Abstract

Zn1-xMnxO (x = 0.01, 0.02, 0.05, 0.1, and 0.15) powders were prepared by solid-state reaction processes. The structural and magnetic properties of the powders were investigated. X-ray diffraction (XRD) analysis of the samples indicates the presence of wurtzite crystal structure similar to pure ZnO and absence of any other secondary phase till 5% Mn doping. This suggests that doped Mn2+ ions substitute Zn2+ sites. However, Raman results revealed the presence of secondary phase even at very low Mn doping (2%), which demonstrates that Mn does not incorporate completely the ZnO lattice. The powders exhibit ferromagnetism at low temperatures and paramagnetic at room temperature. Transition from ferromagnetic to paramagnetic is highlighted by measurements at 230 K.

Type
Research Article
Copyright
© EDP Sciences, 2010

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References

Pearton, S.J., Abernathy, C.R., Norton, D.P., Hebard, A.F., Park, Y.D., Boatner, L.A., Budai, J.D., Mater. Sci. Eng. R. 40, 137 (2003) CrossRef
Ohno, H., Science 281, 951 (1998) CrossRef
Dietl, T., Ohno, H., Matsukura, F., Cibert, J., Ferrand, D., Science 287, 1019 (2000) CrossRef
Chambers, S.A., Surf. Sci. Rep. 61, 348 (2006) CrossRef
R. Bhatt, H. Sankaranarayanan, C.S. Ferekides, D.H. Morel, in Proc. of the 26th PVSC, Anaheim, CA, 1997, Vol. 171, p. 383
T. Dietl, Handbook of Semiconductors, edited by S. Mahajan (North-Holland, Amsterdam, 1994), Vol. 3B, p. 1251
Wolf, S.A., Awschalon, D.D., Buhrman, R.A., Daughton, J.M., von Molnar, S., Roukes, M.L., Chtchelkanova, A.Y., Treger, D.M., Science 294, 1488 (2001) CrossRef
Chambers, S.A., Yoo, Y.K., Mater. Res. Bull. 28, 706 (2003) CrossRef
Cheng, X.M., Chien, C.L., J. Appl. Phys. 93, 7876 (2003) CrossRef
Han, S.J., Jang, T.H., Kim, Y.B., Park, B.G., Park, J.H., Jeonga, Y.H., Appl. Phys. Lett. 83, 920 (2003) CrossRef
Fukumura, T., Jin, Z., Kawasaki, M., Shono, T., Hasegawa, T., Koshihara, S., Koinuma, H., Appl. Phys. Lett. 78, 958 (2001) CrossRef
Hong, N.H., Brizé, V., Sakai, J., Appl. Phys. Lett. 86, 082505 (2005) CrossRef
Kane, M.H., Shalini, K., Summers, C.J., Varatharajan, R., Nause, J., Vestal, C.R., Zhang, Z.J., Ferguson, I.T., Appl. Phys. 97, 023906 (2005) CrossRef
Liu, X.C., Shi, E.W., Chen, Z.Z., Zhang, H.W., Xiao, B., Song, L.X., Appl. Phys. Lett. 88, 062508 (2006) CrossRef
Milivojevic, D., Blanusa, J., Spasojevic, V., Kusigerski, V., Babic-Stojic, B., Solid State Commun. 14, 641 (2007) CrossRef
Cho, Y.M., Choo, W.K., Kim, H., Kim, D., Ihm, Y.E., Appl. Phys. Lett. 80, 3358 (2002) CrossRef
Peiteado, M., Caballero, A.C., Makovec, D., J. Eur. Ceram. Soc. 27, 3915 (2007) CrossRef
Droubay, T.C., Keavney, D.J., Kaspar, T.C., Heald, S.M., Wang, C.M., Johnson, C.A., Whiaker, K.M., Gamelin, D.R., Chambers, S.A., Phys. Rev. B 79, 155203 (2009) CrossRef
B.D. Cullity, Elements of X-ray Diffraction (Addison-Wesley Publishing Company, CA, USA, 1978)
Fernandez, J.F., Caballero, A.C., Villegas, M., Khatib, S.J., Bañares, M.A., Fierro, J.L.G., Costa-Kramer, J.L., Lopez-Ponce, E., Martín-González, M.S., Briones, F., Quesada, A., García, M., Hernando, A., J. Eur. Ceram. Soc. 26, 3017 (2006) CrossRef
Sato-Berru, R.Y., Vázquez-Olmos, A., Fernández-Osorio, A.L., Sotres-Martínez, S., J. Raman Spectrosc. 38, 1073 (2007) CrossRef
Lorite, I., Rubio-Marcos, F., Romero, J.J., Fernández, J.F., Mater. Lett. 63, 212 (2009) CrossRef
Shannon, R.D., Acta Crystallogr. A 32, 751 (1976) CrossRef
N.N. Greenwood, A. Earnshaw, Chemistry of the Elements (Pergamon Press, Oxford, 1997), p. 1040
Peiteadoa, M., Caballerob, A.C., Makoveca, D., J. Solid State Chem. 180, 2459 (2007) CrossRef
Venkataraj, S., Ohashi, N., Sakaguchi, I., Adachi, Y., Ohgaki, T., Ryoken, H., Haneda, H., J. Appl. Phys. 102, 014905 (2007) CrossRef
Jayakumar, O.D., Gopalakrishnan, I.K., Kulshrestha, S.K., Physica B 381, 194 (2006) CrossRef
Sharma, P., Gupta, A., Rao, K.V., Owens, F.J., Sharma, R., Ahuja, R., Osorio Gullen, J.M., Johansson, B., Gehring, G.A., Nat. Mater. 2, 673 (2003) CrossRef
Kolesnik, S., Dabrowski, B., J. Appl. Phys. 96, 5379 (2004) CrossRef
Chen, W., Zhao, L.F., Wang, Y.Q., Miao, J.H., Liu, S., Xia, Z.C., Yuan, S.L., Appl. Phys. Lett. 87, 42507 (2005) CrossRef
Ruderman, M.A., Kittel, C., Phys. Rev. 96, 99 (1954) CrossRef