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Temperature effect on the growth of In2S3 by thermal evaporation technique

Published online by Cambridge University Press:  26 January 2006

A. Timoumi ,
H. Bouzouita ,
M. Kanzari  and
B. Rezig
A. Timoumi*
Affiliation:
Photovoltaic and semiconductor materials laboratory, National Engineering School of Tunis, Belvedere, PO Box 37, 1002 Tunis, Tunisia
H. Bouzouita
Affiliation:
Photovoltaic and semiconductor materials laboratory, National Engineering School of Tunis, Belvedere, PO Box 37, 1002 Tunis, Tunisia
M. Kanzari
Affiliation:
Photovoltaic and semiconductor materials laboratory, National Engineering School of Tunis, Belvedere, PO Box 37, 1002 Tunis, Tunisia
B. Rezig
Affiliation:
Photovoltaic and semiconductor materials laboratory, National Engineering School of Tunis, Belvedere, PO Box 37, 1002 Tunis, Tunisia
*
timoumiabdelmajid@yahoo.fr
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Abstract

The vacuum thermal evaporation technique (VTET) allows the deposition of highly homogeneous thin films with excellent step coverage. This method has already shows promising results for the deposition of indium sulphide at different substrate temperature between 453 and 513 K. Indium sulphide thin films have been synthesised and deposited by vacuum thermal evaporation technique. Experimental parameters have been adjusted in order to obtain a high band gap and low absorption material at low deposition temperature, as required for photovoltaic applications. The structural, morphological and optical properties were characterised by X-ray diffraction analysis, Surface Electron Microscopy and spectrophotometry. The VTET-In2S3 thin films are homogeneous and crystallised at 513 K with direct band gap values of about 2 eV.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 33 , Issue 2 , February 2006 , pp. 77 - 81
Copyright
© EDP Sciences, 2006

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