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Theoretical study of correlated disorder in superlattices under bias voltage

Published online by Cambridge University Press:  28 July 2009

R. Djelti ,
S. Bentata ,
Z. Aziz  and
A. Besbes
R. Djelti*
Affiliation:
Département de physique, Laboratoire de valorisation des matériaux, Faculté des sciences, Université Abdelhamid Ibn Badis, BP 227, Mostaganem 27000, Algeria
S. Bentata
Affiliation:
Département de physique, Laboratoire de valorisation des matériaux, Faculté des sciences, Université Abdelhamid Ibn Badis, BP 227, Mostaganem 27000, Algeria
Z. Aziz
Affiliation:
Département de physique, Laboratoire de valorisation des matériaux, Faculté des sciences, Université Abdelhamid Ibn Badis, BP 227, Mostaganem 27000, Algeria
A. Besbes
Affiliation:
Département de physique, Laboratoire de valorisation des matériaux, Faculté des sciences, Université Abdelhamid Ibn Badis, BP 227, Mostaganem 27000, Algeria
*
djeltired@yahoo.fr
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Abstract

The effect of structural disorder under bias voltage on the transmission properties of a non-interacting electron across multibarrier systems (GaAs/Alx Ga $_{1-x}$ As) is exhaustively studied by a computational model using exact Airy function formalism and the transfer-matrix technique. In ordered systems we study the effect of bias voltage on miniband structure. For disordered structures we investigate the transmission coefficient. Different types of eigenstates are obtained, those having a very low Lyapunov exponent close to the resonant energy and those with high slope in other region. Commuting resonance energy is theoretically demonstrated in this paper, the obtained values are in good agreement with the existing numerical results.

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Type
Research Article
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The European Physical Journal - Applied Physics , Volume 48 , Issue 1 , October 2009 , 10605
Copyright
© EDP Sciences, 2009

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