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X-ray metrology for advanced microelectronics

Published online by Cambridge University Press:  26 January 2010

C. Wyon
C. Wyon*
Affiliation:
CEA-LETI, Minatec, 17 rue des Martyrs, 38054 Grenoble, France
*
cwyon@cea.fr
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Abstract

The recent development of bright X-ray sources, reliable X-ray focusing optics, large X-ray detectors and X-ray data modelling and processing, have improved X-ray techniques to the point where many are being introduced in MOS transistor manufacturing lines as new metrology methods. The fundamental X-ray physical properties, such as their small wavelength and their weak interaction with solid-state matter satisfy basic in-line metrology requirements: non-destructiveness, speed, accuracy, reliability and long-term stability. The capability of X-ray based metrology methods to monitor critical 65 and 45 nm processes such as ion implant, nitrided SiO2 gate dielectrics, NiSi, Cu/porous low-κ interconnects and MIM capacitors is highlighted in this paper. 


Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 49 , Issue 2: International Conference on Electrical Contacts (ICEC 2008) , February 2010 , 20101
Copyright
© EDP Sciences, 2009

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