Fluorocarbon (C:F) and nitrogen-doped fluorocarbon (C:F:N) thin films are
deposited by RF magnetron sputtering using a polytetrafluoroethylene (PTFE)
target and Ar or Ar/N2 sputtering gas. Properties of C:F:N films are
compared to those of C:F films. They are studied using X-ray Photoelectron
Spectroscopy (XPS), Infra-Red (IR) transmission spectroscopy,
Thermo-Gravimetric Analysis (TGA), impedance spectroscopy, and
current-voltage measurements. By adding nitrogen to the sputtering gas, XPS
shows that nitrogen substitutes for fluorine leading to a decrease in the
relative concentration of CFx species, to an increase in C-C bonds, and
to the appearance of specific CFN bonds. There is also a new IR band at 1350 cm-1
whose origin is uncertain (CN bonds or disordered sp2
carbon). Thermal stability is not improved upon nitrogen addition (the C:F
and C:F:N films both decompose above 200 °C). Dielectric properties
(dielectric constant and loss) are only slightly affected by nitrogen
doping. The DC transport properties are modified upon nitrogen addition
(C:F:N films display a higher resistivity and a supra-linear behaviour at
high fields indicative of field-enhanced tunnelling transport).