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Sidelobe reduction with a GaN active array antenna

Part of: Wirelessly Powering: The Future

Published online by Cambridge University Press:  21 November 2017

Naoki Hasegawa  and
Naoki Shinohara
Naoki Hasegawa*
Affiliation:
Research Institute for Sustainable Humanosphere, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan. Phone: +81 774 38 3853
Naoki Shinohara
Affiliation:
Research Institute for Sustainable Humanosphere, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan. Phone: +81 774 38 3853
*
Corresponding author: N. Hasegawa Email: naoki_hasegawa@rish.kyoto-u.ac.jp
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Abstract

This work proposes a tunable sidelobe reduction method based on a GaN active-antenna technique, in which the output radio frequency power is controlled by the DC drain voltage of the amplifiers. In this study, a 1 × 4 array of active antenna with GaN amplifiers is designed and fabricated. GaN amplifiers capable of up to 10 W-class power output are fabricated and arranged for a four-way active-array antenna. The fabricated single-stage GaN amplifier offers a maximum power-added efficiency of 59.6% and a maximum output power of 39.3 dBm. The maximum output power is decreased to 36.5 dBm upon decreasing the operating drain voltage from 55 to 35 V. In this study, a 4.5 dB sidelobe reduction is demonstrated in a 1 × 4 active antenna based on this output power difference for each amplifier.

Keywords

Microwave power transfer (MPT)GaN amplifierSidelobe reductionActive array antenna

Information

Type
Wirelessly Powering: The Future
Information
Wireless Power Transfer , Volume 4 , Special Issue 2: Contactless Charging for Electric Vehicles , September 2017 , pp. 113 - 119
Copyright
Copyright © Cambridge University Press 2017 

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