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Low Temperature Anneal of the Divacancy in P-Type Silicon

Published online by Cambridge University Press:  26 February 2011

M.-A. Trauwaert ,
J. Vanhellemont ,
H. E. Maes ,
A.-M. Van Bavel ,
G. Langouche ,
A. Stesmans  and
P. Clauws
M.-A. Trauwaert
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, BELGIUM
J. Vanhellemont
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, BELGIUM
H. E. Maes
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, BELGIUM
A.-M. Van Bavel
Affiliation:
K. U. Leuven, Celestijnenlaan 200D, B-3001 Leuven, BELGIUM
G. Langouche
Affiliation:
K. U. Leuven, Celestijnenlaan 200D, B-3001 Leuven, BELGIUM
A. Stesmans
Affiliation:
K. U. Leuven, Celestijnenlaan 200D, B-3001 Leuven, BELGIUM
P. Clauws
Affiliation:
U. Gent, Krijgslaan 281-S1, B-9000 Gent, BELGIUM
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Abstract

Results are reported of a Deep Level Transient Spectroscopy (DLTS) study of the conversion of the divacancy, with energy level at Ev+0.19eV, to a level at Ev+0.24eV after anneal at temperatures below its dissociation temperature (300°C). In literature both levels have been associated with the donor level of the divacancy.

Diodes processed on p-type Float Zone (FZ) and Czochralski (Cz) silicon wafers with boron concentration between 0.2 and 3E15 cm−3 are irradiated with 2 MeV electrons. Before and after anneal (200°C and 250°C) DLTS spectra are recorded to get a full electrical characterisation of the induced defects.

The observed conversion is proposed to be a gradual transformation of the divacancy to a divacancy-oxygen complex.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 953
Copyright
Copyright © Materials Research Society 1995

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