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Characterization of Silicon-Nitride Film Growth by Remote Plasmaenhanced Chemical-Vapor Deposition (Rpecvd)

Published online by Cambridge University Press:  22 February 2011

Zhong Lu ,
Yi Ma ,
Scott Habermehl  and
Gerry Lucovsky
Zhong Lu
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer EngineeringNorth Carolina State University, Raleigh, NC 27695-8202
Yi Ma
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer EngineeringNorth Carolina State University, Raleigh, NC 27695-8202
Scott Habermehl
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer EngineeringNorth Carolina State University, Raleigh, NC 27695-8202
Gerry Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer EngineeringNorth Carolina State University, Raleigh, NC 27695-8202
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Abstract

We have characterized RPECVD formation of Si-nitride films by relating the chemical bonding in the deposited films to the growth conditions. Gas flow rates for different N- and Si-atom source gases have been correlated with (i) the film stoichiometry, i.e., the Si/N ratio, and the (ii) the growth rate. N2 and NH3 were used as N-atom source gases, and were either delivered (i) up-stream through the plasmageneration tube, or (ii) down-stream. Different flow-rate ratios of NH3/SiH4 were found for deposition of stoichiometric Si-nitride films using up-stream or down-stream introduction of NH3. This is explained in terms of competition between excitation and recombination processes for the N-atom precursor species. Stoichiometric nitride films could not be obtained using the N2 source gas for (i) either up-stream or down-stream delivery, and (ii) for plasma powers up to 50 W. This is attributed to the higher relative binding energy of N-atoms in N2 compared to NH3, and to significant N-atom recombination at high N2 flow rates through the plasma generation region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 341
Copyright
Copyright © Materials Research Society 1994

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References

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