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Explaining and predicting the properties of materials using quantum theory

Published online by Cambridge University Press:  03 June 2015

Marvin L. Cohen*
Affiliation:
University of California–Berkeley and Lawrence Berkeley National Laboratory, USA; mlcohen@berkeley.edu

Abstract

It has been about a hundred years since the atomic nature of matter began to be generally accepted. By the late 1920s, atomic theory was well established, and quantum theory had explained many properties of atoms in gases. The interpretation of the sharp lines in atomic optical spectra could be explained in terms of transitions between electronic energy levels. The application of interacting atoms in solids appeared straightforward in principle, and although quantum theory answered many fundamental questions about condensed matter, theoretical applications were mostly appropriate for idealized models of solids. Because the optical spectra of solids had broad structure, explaining their origin in terms of electronic transitions was more difficult than for the case of atoms. It was not until the 1960s that accurate electronic band structures could be calculated for bulk materials. Basic and applied research involving semiconductors, superconductors, and nanostructured materials has guided the application of quantum theory to condensed matter. These are areas where the use of quantum theory has been central in explaining and predicting properties and has even led to the discovery of new materials.

Information

Type
Research Article
Copyright
Copyright © Materials Research Society 2015 
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Figure 1. Room-temperature reflectivity of HgTe, CdTe, and ZnTe samples show the broad absorbances in solids that were difficult to interpret with early quantum theories. Reprinted with permission from Reference 3. © 1963 American Physical Society.

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Figure 2. Energy level diagrams for the electronic levels of the three main categories of solids, metals, semiconductors, and insulators.

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Figure 3. Comparison of experiment and theoretical calculations for the derivative of reflectivity with respect to energy in Ge.

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Figure 4. Schematic model of a covalent semiconductor showing the positions of atomic nuclei in black and the clouds of electrons forming bonds between them.

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Figure 5. Schematic model of a pseudopotential constructed from attractive and repulsive components.

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Figure 6. Electronic band structure of germanium in momentum space, where electrons can occupy states along each curve.

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Figure 7. Valence electronic charge density of silicon, showing increased density in the space between nuclei associated with a covalent bond. Reprinted with permission from Reference 10. © 1989 Springer.

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Figure 8. The effect of silicon’s core p electrons is apparent in comparing the valence electronic charge density of solid carbon and silicon, where unlike silicon, the density of electrons in carbon has a double hump structure. Reprinted with permission from Reference 17. © 1973 AAAS.

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Figure 9. Quantum calculations provided insights into the modification of silicon to better absorb light from the solar spectrum. Reprinted with permission from Reference 18. © 1973 AIP Publishing.

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Figure 10. Carbon nanotube [(8,0)/(7,1)] with a Schottky barrier resulting from the interface between two different types of nanotube structures. Reprinted with permission from Reference 19. © 1996 American Physical Society.