Hostname: page-component-77f85d65b8-hjwss Total loading time: 0 Render date: 2026-03-26T13:19:30.902Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural Investigation of SiC/Al4C3 and SiC/TiC Interfaces Formed in the Brazing of Sic

Published online by Cambridge University Press:  25 February 2011

T. Yano ,
S. Kato ,
H. Suematsu  and
T. Iseki
T. Yano
Affiliation:
Research Laboratory for Nuclear Reactors, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, Japan
S. Kato
Affiliation:
Research Laboratory for Nuclear Reactors, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, Japan
H. Suematsu
Affiliation:
Research Laboratory for Nuclear Reactors, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, Japan
T. Iseki
Affiliation:
Departmentof Inorganic Materials, Faculty of Engineering, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, Japan
Get access

Abstract

Two heterophase interfaces formed in the joining of α-SiC were investigated using high-resolution electron microscopy coupled with a multi-slice structural image simulation. A reaction product TiC was formed epitaxially on the basal plane of α-SiC single crystal when SiC was brazed with a Ag-Cu alloy containing small amount of Ti. A coherent interface with Si-C and Ti-C bonding was found between the SIC(0001) and TiC(111). Al4C3 was grown also epitaxially on the basal plane of SiC when it was brazed with AL. A semicoherent interface including interfacial dislocations and intermediate' transition phase was observed between the SIC(0001) and Al4C3(0001). It was estimated that the carbon atom sublattice was maintained through those crystals.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 105
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Yano, T., Suematsu, H. and Iseki, T., J. Mater. Sci. 23, 3362 (1988).CrossRefGoogle Scholar
[2] Yano, T., Kato, S. and Iseki, T., J. Am. Ceram. Soc. (to be published).Google Scholar
[3] Lim, C. B., Yano, T. and Iseki, T., J. Mater. Sci. 24, 4144 (1989).CrossRefGoogle Scholar
[4] Olsen, A. and Spence, J. C. H., Phil. Mag. A, 43, 945 (1981).Google Scholar
[5] Smith, D. J. and O'Keefe, M. A., Acta Cryst. A39, 139 (1983).Google Scholar
[6] Yano, T. and Iseki, T., Phil. Mag. A, 62, 421 (1990).Google Scholar
[7] JCPDS card, 32-1383.Google Scholar
[8] Mesquita, A. H. Gomes de, Acta Cryst. 23, 610 (1967).CrossRefGoogle Scholar
[9] Jeffrey, G. A. and Wu, V. Y., Acta Cryst. 20, 538 (1966).Google Scholar
[10] Olson, G. B. and Cohen, M., Acta Metall. 27, 1907 (1979).CrossRefGoogle Scholar
[11] Wells, A. F., Structural Inorganic Chemistry, 5th ed. (Oxford University Press, Oxford, 1984) p.982.Google Scholar
[12] Lambrecht, W. R. L. and Segall, B., in Interfaces in Metal-Ceramic Composite, edited by Lin, R. Y., Arsenault, R. J., Martins, G. P. and Fishman, S. G., (The Minerals Metals & Materials Society, 1989) p.319.Google Scholar
[13] Lambrecht, W. R. L. and Segall, B., in Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors, edited by Glass, J. T., Messier, R. and Fujimori, N. (Mater. Res. Soc. Proc. 162, Pittsburgh, PA, 1990) p.501.Google Scholar