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Reactive ion Etching of Pt/PbZrxTi1−xO3/Pt Integrated Ferroelectric Capacitors

Published online by Cambridge University Press:  21 February 2011

J.J. Van Glabbeek ,
G.A.C.M. Spierings ,
M.J.E. Ulenaers ,
G.J.M. Dormans  and
P.K. Larsen
J.J. Van Glabbeek
Affiliation:
Philips Research Laboratories, P.O.Box 80.000, 5600 JA Eindhoven, The, Netherlands
G.A.C.M. Spierings
Affiliation:
Philips Research Laboratories, P.O.Box 80.000, 5600 JA Eindhoven, The, Netherlands
M.J.E. Ulenaers
Affiliation:
Philips Research Laboratories, P.O.Box 80.000, 5600 JA Eindhoven, The, Netherlands
G.J.M. Dormans
Affiliation:
Philips Research Laboratories, P.O.Box 80.000, 5600 JA Eindhoven, The, Netherlands
P.K. Larsen
Affiliation:
Philips Research Laboratories, P.O.Box 80.000, 5600 JA Eindhoven, The, Netherlands
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Abstract

Dry etching of a Pt/PbZrxTi1−xO3/Pt (Pt/PZT/Pt) ferroelectric capacitor stack with CF4/Ar plasmas with a reactive ion etching process for the fabrication of micrometer-sized integrated ferroelectric capacitors is described. The etch rate for both Pt and PZT is determined as a function of the process settings: Power, pressure and CF4-Ar gas flow ratio. A chemical enhancement of the etch rate is found for PZT. It is shown that it is possible to etch the Pt/PZT/Pt ferroelectric capacitor stack in a CF4/Ar plasma in a single lithographic process using patterning by photoresist masking. Redeposition processes occurring during etching are described.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 127
Copyright
Copyright © Materials Research Society 1993

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