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Ferroelectric Na0.5K0.5NbO3 Films for Voltage Tunable Microwave Devices

Published online by Cambridge University Press:  18 March 2011

Choong-Rae Cho ,
Alex Grishin ,
Johanna Andrèasson ,
Ture Lindbäck ,
Saeed Abadei  and
Spartak Gevorgian
Choong-Rae Cho
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden
Alex Grishin
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden
Johanna Andrèasson
Affiliation:
Department of Materials and Manufacturing Engineering, Luleå University of Technology, S-971 87 Luleå, Sweden
Ture Lindbäck
Affiliation:
Department of Materials and Manufacturing Engineering, Luleå University of Technology, S-971 87 Luleå, Sweden
Saeed Abadei
Affiliation:
Department of Microelectronics, Chalmers University of Technology, S-412 96 Göteborg, Sweden
Spartak Gevorgian
Affiliation:
Department of Microelectronics, Chalmers University of Technology, S-412 96 Göteborg, Sweden
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Abstract

Single phase Na0.5K0.5NbO3 (NKN) thin films have been pulsed laser deposited on Al2O3(0112), LaAlO3(001), and MgO(001) single crystal substrates as well as on the SiO2/Si(001) wafers to demonstrate films feasibility for voltage tunable microwave device applications. NKN film texture has been found to be quite different on three different single crystals: highly c-axis oriented on Al2O3, “cube-on-cube” epitaxial quality on LaAlO3, bi-axial textures on MgO, while NKN films grown on Si substrate with various thickness of SiO2 buffer layer possess highly c-axis oriented quadrupled structure. NKN film interdigital capacitors fabricated onto single crystal oxide substrates showed tunability of 30-40 % and dissipation factor of 0.01-0.02 at 1 MHz and applied electric field of 100kV/cm. Microwave frequency measurements for NKN/Si varactors yield 13 % tunability and dielectric loss tanδ as low as 0.012 at 40 GHz under 200 kV/cm applied bias.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 656: Symposium DD – Materials Issues for Tunable RF and Microwave Devices II , 2000 , DD3.2
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

[1] Wang, X., Helmersson, U., Olafsson, S., Rudner, S., Wernlund, L.-D., Gevorgian, S., Appl. Phys. Lett. 73, 927 (1998).Google Scholar
[2] Cho, C.-R., Koh, J.-H., Grishin, A., Abadei, S., Gevorgian, S., Appl. Phys. Lett. 76, 1761 (2000).Google Scholar
[3] McNeal, M. P., Jang, S.-J., Newnham, R. E., J. Appl. Phys. 83, 3288 (1998).Google Scholar
[4] Cho, C.-R., Grishin, A., J. Appl. Phys. 87, 4439 (2000).Google Scholar
[5] Glazer, A. M., Acta Crystallogr. Sect. A: Cryst Phys., Diffr., Theor. Gen. Crystallogr. A31, 756 (1975).Google Scholar
[6] Cho, C.-R., Grishin, A., To appear in Mat. Res. Soc. Proc. 623, (2000).Google Scholar
[7] Jia, Q. X., Groves, J. R., Arendt, P., Fan, Y., Findikoglu, A. T., Foltyn, S. R., Jiang, H., Miranda, F. A., Appl. Phys. Lett. 74, 1564 (1999).Google Scholar
[8] Knauss, L. A., Pond, J. M., Horwitz, J. S., Chrisey, D. B., Mueller, C. H., Treece, R., Appl. Phys. Lett. 69, 25 (1996).Google Scholar
[9] Gevorgian, S. S., Martinsson, T., Linner, P. L. J., Kollberg, E. L., IEEE Transactions on Microwave Theory and Technologies 44, 896, (1996).Google Scholar
[10] Chang, W., Gilmore, C. M., Kim, W.-J., Pond, J. M., Kirchoefer, S.W., Qadri, S.B., Chirsey, D.B., Horwitz, J.S., J. Appl. Phys. 87, 3044 (2000).Google Scholar
[11] Abadei, S., Gevorgian, S., Cho, C.-R., Grishin, A., Andrèasson, J., Lindbäck, T., Appl. Phys. Lett. 78, 1900 (2001).Google Scholar
[12] York, R. A., Nagra, A. S., Periaswamy, P., Auciello, O., Streiffer, S. K., Im, J., Integrated Ferroelectrics 34, 177 (2001).Google Scholar