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Bistability of Defects in Semiconductors

Published online by Cambridge University Press:  26 February 2011

Masashi Mizuta
Masashi Mizuta*
Affiliation:
Fundamental Research Laboratories, NEC Corporation 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
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Abstract

The DX center in AlGaAs alloy is reviewed as an example of bistability of defects in semiconductors. Also presented is some technological importance of the defect bistability.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 929
Copyright
Copyright © Materials Research Society 1995

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