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Design and Growth of Band-GAP Graded a-SiGe:H Solar Cells

Published online by Cambridge University Press:  15 February 2011

K. Vasanth ,
A. Payne ,
B. Crone ,
S. Sherman ,
M. Jakubowski  and
S. Wagner
K. Vasanth
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544, USA.
A. Payne
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544, USA.
B. Crone
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544, USA.
S. Sherman
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544, USA.
M. Jakubowski
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544, USA.
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544, USA.
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Abstract

The i-layers of the middle and bottom cells in stable triple-junction amorphous silicon solar cells are composed of a-SiGe:H alloys which are graded in composition to enhance performance. We compare modeling and experimental results for three i-layer band gap grading schemes to determine the optimal profile. We find a good correlation between model trends and measured device parameters for all grading schemes. This is encouraging for the use of the model in predictive device design. We find that the highest white and red light performance do not necessarily have the same cell parameter set. Modeling and experiment indicate that thin cells without band gap profile and with suitably designed p/i and n/i buffer layers, have the best red light performance.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 663
Copyright
Copyright © Materials Research Society 1995

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References

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