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Dislocation Mobilities in GaN from Molecular Dynamics Simulations– CORRIGENDUM

Published online by Cambridge University Press:  04 March 2015

N. Scott Weingarten

Abstract

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doi: 10.1557/opl.2015.25, Published by Materials Research Society, 02 February 2015.

The original Figure 4 published in this paper is incorrect. Below is the correct figure, as well as updates to the surrounding text regarding this figure:

Page 3, in section “c-type edge dislocations”:

There are two slip systems for c-type dislocations, $\left\{ {\bar 1\bar 120} \right\}\left\langle {0001} \right\rangle$ and $\left\{ {1\bar 100} \right\}\left\langle {0001} \right\rangle$ .

Page 4:

Figure 4

- (a) The core structure of a $\left( {\bar 1\bar 120} \right)\left[ {0001} \right]$ c-type dislocation, (b) the same dislocation looking down on the glide plane, with crystallographic directions as indicated. (c) and (d) are the same for a $\left( {\bar 1100} \right)\left[ {0001} \right]$ c-type dislocation.

The author regrets this error.

References

Weingarten, N. Scott (2015). Dislocation Mobilities in GaN from Molecular Dynamics Simulations. MRS Proceedings, 1741, mrsf14-1741-aa01-03, doi:10.1557/opl.2015.25.CrossRefGoogle Scholar
Figure 0

Figure 4 - (a) The core structure of a $\left( {\bar 1\bar 120} \right)\left[ {0001} \right]$c-type dislocation, (b) the same dislocation looking down on the glide plane, with crystallographic directions as indicated. (c) and (d) are the same for a $\left( {\bar 1100} \right)\left[ {0001} \right]$c-type dislocation.