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Surface Diffusion of SiH3 Radicals and Growth Mechanism of a-Si:H and μc-Si

Published online by Cambridge University Press:  01 February 2011

R Dewarrat  and
J Robertson
R Dewarrat
Affiliation:
Engineering Department, Cambridge University, Cambridge CB2 1PZ, UK
J Robertson
Affiliation:
Engineering Department, Cambridge University, Cambridge CB2 1PZ, UK
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Abstract

Existing growth mechanisms of hydrogenated amorphous silicon (a-Si:H) and micro-crystalline silicon assume that the growth species SiH3 can diffuse over the hydrogen-saturated Si surface. However, recent calculations suggest that this could not happen. Local density formalism pseudopotential calculations have been carried out of binding of SiH3 to hydrogen terminated (111)Si surfaces. The bound site is not the three-centre Si-H-Si bridging site previously assumed. It has a direct Si-Si bond between the SiH3 and the surface Si, and the surface hydrogen is displaced to a bond centre of a surface Si-Si bond. A bound site confirms conventional models of growth of a-Si:H and microcrystalline Si, in which a mobile growth species creates smooth surfaces.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A15.3
Copyright
Copyright © Materials Research Society 2002

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