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Nonlinear Damping Generated by Spin Injection in a Pseudo-spin-valve Structure

Published online by Cambridge University Press:  21 March 2011

Min Ren
Affiliation:
Institute of Microelectronics, Tsinghua University, Haidian Dist., Beijing, 100084, China, People's Republic of
Lei Zhang
Affiliation:
Institute of Microelectronics, Tsinghua University, Haidian Dist., Beijing, 100084, China, People's Republic of
Jiuning Hu
Affiliation:
Institute of Microelectronics, Tsinghua University, Haidian Dist., Beijing, 100084, China, People's Republic of
Ning Deng
Affiliation:
Institute of Microelectronics, Tsinghua University, Haidian Dist., Beijing, 100084, China, People's Republic of
Hao Dong
Affiliation:
Institute of Microelectronics, Tsinghua University, Haidian Dist., Beijing, 100084, China, People's Republic of
Peiyi Chen
Affiliation:
Institute of Microelectronics, Tsinghua University, Haidian Dist., Beijing, 100084, China, People's Republic of
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Abstract

The current induced magnetic dynamics of a nano-scale pseudo-spin-valve (PSV) structure was theoretically studied. The spin relaxation mechanisms and the influence of ferromagnetic/nonmagnetic (FM/NM) interfaces on the current polarization were investigated, and a modified magnetic dynamic equation was developed. Both the free layer's local magnetic moments and itinerant electrons' spins were regarded as a macro-spin, whose movement was resulted from two items: spin relaxation due to the magnetic damping and spin accumulation due to the polarized current. The injected current not only produces a spin transfer torque, but also alters the effective magnetic field, and thus affects the damping. Therefore, the damping is nonlinear and correlated to the current. Based on the analysis of the competition between magnetic damping and spin accumulation, the dynamic behaviors of magnetization switching and oscillation can be explained.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Slonczewski, J. C., J. Magn. Magn. Mater. 159, L1 (1996).Google Scholar
2. Berger, L., Phys. Rev. B 54, 9353 (1996).Google Scholar
3. Heide, C., Zilberman, P. E. and Elliott, R. J., Phys. Rev. B. 63 064424 (2001).Google Scholar
4. Covington, M., AlHajDarwish, M., Ding, Y., Rebei, A., Parker, G. J., Gokemeijer, N. and Seigler, M. A: J. Magn. Magn. Mater. 287 (2005) 325.Google Scholar
5. Peng, Xilin, Xi, Haiwen, Granstrom, Eric and Xue, Song: Phys. Rev. B. 72 (2005), 052403.Google Scholar
6. Kaka, S., Pufall, M. R., Rippard, W. H., Silva, T. J., Russek, S. E., Katine, J. A. and Carey, M.: J. Magn. Magn. Mater. 286 (2005) 375.Google Scholar
7. Urazhdin, S., Birge, N. O., Pratt, W. P. and Bass, J.: Appl. Phys. Lett. 84, 1516 (2004).Google Scholar
8. AlHajDarwish, M., Kurt, H., Urazhdin, S., Fert, A., Loloee, R., Pratt, W. P. Jr. and Bass, J.: Phys. Rev. Lett. 93, 157203 (2004).Google Scholar
9. Guo, J. and Jalil, M. B. A.: Phys. Rev. B. 71, 224408 (2005).Google Scholar
10. Shpiro, Asya, Levy, Peter M. and Zhang, Shufeng: Phys. Rev. B 67, 104430 (2003).Google Scholar
11. Barnaś, J., Fert, A., Gmitra, M.: Phys. Rev. B. 72, 024426 (2005).Google Scholar
12. Hu, Jiuning, Ren, Min, Zhang, Lei, Deng, Ning, Dong, Hao and Chen, Peiyi, MRS 2007 SPRING MEETING, accepted.Google Scholar
13. Ren, Min, Zhang, Lei, Hu, Jiuning, Deng, Ning and Chen, Peiyi, International Conference on Solid State Devices and Materials (SSDM), Yokohama, Japan (2006).Google Scholar
14. Ren, Min, Zhang, Lei, Hu, Jiuning, Deng, Ning, Dong, Hao and Chen, Peiyi, Acta Physica Sinica, accepted.Google Scholar