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Mobility characterization of p-type and n-type strained sil-x-yGexcy/Si Epilayer hall devices

Published online by Cambridge University Press:  10 February 2011

Jeff J. Petersoa ,
Charles E. Hunt ,
Stefan F. Zappe ,
Ernst Obeneier ,
Richard Westhoff  and
McDonald Robinson
Jeff J. Petersoa
Affiliation:
Department of Electrical and Computer Engineering; University of California, Davis; Davis, CA 95616
Charles E. Hunt
Affiliation:
Department of Electrical and Computer Engineering; University of California, Davis; Davis, CA 95616
Stefan F. Zappe
Affiliation:
Microsensor and Actuator Technology, Technical University of Berlin; D-13355 Berlin, Germany
Ernst Obeneier
Affiliation:
Microsensor and Actuator Technology, Technical University of Berlin; D-13355 Berlin, Germany
Richard Westhoff
Affiliation:
Lawrence Semiconductor Research Laboratory, Inc.; Tempe, AZ 85282
McDonald Robinson
Affiliation:
Lawrence Semiconductor Research Laboratory, Inc.; Tempe, AZ 85282
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Abstract

Mobilities in Si1-x-yGex Cy layers were measured using mesa etched Van der Pauw structures for alloy layers with 0 < x < 0.30 and 0 < y < 0.02 and doping levels of 1015 < N < 1018 cm-3. Mobilities in Si1-x-yGex Cy layers with x = 0.27 were found to approach Si mobilities for both μn and μp.While electron mobilities in phosphorous-doped SiGeC decrease with doping concentration, hole mobilities in boron-doped SiGeC increase with doping level, indicating ionized impurity scattering is not dominant for μp over the temperature range studied.

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