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Chemical Beam Epitaxy of GaP Using Triethylgallium and Tertiarybutylphosphine
Published online by Cambridge University Press: 22 February 2011
Abstract
In this paper we report the growth of GaP/Si heterostructures by metalorganic chemical beam epitaxy (MOCBE), including information on a MOCBE system custom built for this work. The gallium source was triethylgallium and the phosphorus source was tertiarybutylphosphine. The range for GaP epitaxy is 260 <T< 375°C. Methods of characterization included scanning electron microscopy (SEM), Auger electron (AES), X-ray photoelectron (XPS) and Rutherford backscattering (RBS) spectroscopies.
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- Copyright © Materials Research Society 1993
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