This is an outstanding book on graphene and related materials, including carbon nanotubes, graphene oxide (GO), and reduced graphene oxide (R-GO). Four chapters cover the fabrication, fundamental properties, and characterization of carbon-based materials and devices. This book will be useful for researchers working in graphene materials in the applied physics, chemistry, and materials science areas.
Chapter 1 starts with fundamentals of carbon atomic configuration. Fundamental properties and various applications of carbon allotropes such as fullerenes and nanotubes are discussed in detail. Transfer characteristics, band diagrams, and sensor performance of carbon-based devices, such as transistors and sensors, are explained with the help of experimental and simulated data for various input conditions. A brief history about the discovery of graphene is given at the end of the chapter.
The second chapter is dedicated to nonvolatile memory devices based on graphene nanomaterials. Switching behavior, current–voltage (I–V) characteristics, and repeatability during hundreds of cycles of graphene-based devices are discussed in detail, along with the SEM and HRTEM images of those devices. Tables present the results (e.g., switching time, retention time, cyclability) obtained from the various nonvolatile memories built with graphene, GO, and R-GO. With the help of schematics, MoS2/graphene heterostructure memory layout and energy-band diagrams are presented.
Fabrication and applications of electric double-layer capacitors based on graphene-related materials are presented in the third chapter. Basic physics principles of supercapacitors are discussed with the help of the Helmholtz model and respective diagrams and V-E characteristics. Ragone plots of graphene supercapacitors, SEM and TEM images of various graphite collectors, and images of flexible electrodes are useful for readers to understand the device characteristics and their cross-sectional views. At the end, graphene-based composites for supercapacitors are briefly discussed.
The fourth chapter deals with physical phenomena and industrial interest behind other 2D materials, such as silicon, germanium-based materials, stanene, transition-metal dichalcogenides (TMDs), phosphorene, carbides, and nitrides. The quantum Hall effect and quantum spin Hall effect in 1D systems are explained with magnetic theories. Fabrication of transistors using TMD, their morphology, I–V characteristics, and device illustrations are well explained. At the end, various applications (e.g., spintronics, thermoelectric) of these 2D materials are listed.
The fifth chapter discusses the basics of spintronics. Graphene-based spintronic devices, their fabrication methods, and characteristics of spintronic devices are discussed. Main parameters for spin are measured in different materials compared to graphene and are tabulated.
In summary, this is an outstanding book covering many nanodevices based on graphene, TMD, and other 2D materials. Fundamental properties and fabrication methods of recent graphene-based 2D materials are well covered. This book is mainly targeted toward researchers. Recent references are listed at the end of each chapter. There are no solved problems or homework problems provided. I strongly recommend this book to researchers interested in device fabrication based on graphene, carbon-based materials, and other 2D materials.
Reviewer: K. Kamala Bharathi, SRM Institute of Science and Technology, India.
