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Electronic and Optoelectronic Applications of Materials Grown at a Low Temperature by MBE

Published online by Cambridge University Press:  15 February 2011

U. K. Mishra  and
R. M. Kolbas
U. K. Mishra
Affiliation:
ECE Department, UCSB, Santa Barbara, CA. 93106
R. M. Kolbas
Affiliation:
Department of E&CE, NC State University, Raleigh, NC 27695
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Abstract

Materials grown at a low temperature by MBE and subsequently annealed at a high temperature have an excess amount of Arsenic and have demonstrated high dielectric breakdown strength and low carrier lifetime. These properties have found applications in analog and switching power applications, in picosecond pulse generation, in device isolation and in the selective intermixing of heterostructures. This paper reviews these applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 159
Copyright
Copyright © Materials Research Society 1992

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References

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